Daily Papers

A bilayer formed by stacking two distinct materials creates a moiré lattice, which can serve as a platform for novel electronic phases. In this work we study a unique example of such a system: the graphene-black phosphorus heterostructure (G/BP), which has been suggested to have an intricate band structure. Most notably, the valence band hosts a quasi-one-dimensional region in the Brillouin zone of high density of states, suggesting that various many-body electronic phases are likely to emerge. We derive an effective tight-binding model that reproduces this band structure, and explore the emergent broken-symmetry phases when interactions are introduced. Employing a mean-field analysis, we find that the favored ground-state exhibits a striped spin density wave (SDW) order, characterized by either one of two-fold degenerate wave-vectors that are tunable by gating. Further exploring the phase-diagram controlled by gate voltage and the interaction strength, we find that the SDW-ordered state undergoes a metal to insulator transition via an intermediate metallic phase which supports striped SDW correlations. Possible experimental signatures are discussed, in particular a highly anisotropic dispersion of the collective excitations which should be manifested in electric and thermal transport.

The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nanoelectronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.

Electron-beam (e-beam) manipulation of single dopant atoms in an aberration-corrected scanning transmission electron microscope is emerging as a method for directed atomic motion and atom-by-atom assembly. Until now, the dopant species have been limited to atoms closely matched to carbon in terms of ionic radius and capable of strong covalent bonding with carbon atoms in the graphene lattice. In situ dopant insertion into a graphene lattice has thus far been demonstrated only for Si, which is ubiquitously present as a contaminant in this material. Here, we achieve in situ manipulation of Pt atoms and their insertion into the graphene host matrix using the e-beam deposited Pt on graphene as a host system. We further demonstrate a mechanism for stabilization of the Pt atom, enabled through the formation of Si-stabilized Pt heteroatomic clusters attached to the graphene surface. This study provides evidence toward the universality of the e-beam assembly approach, opening a pathway for exploring cluster chemistry through direct assembly.

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moiré systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moiré nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.

Graphene stands as a promising material with vast potential across energy storage, electronics, etc. Here, we present a novel mechanical approach utilizing ultrasonic high-energy intercalation exfoliation to extract monolayer graphene from graphite, offering a simple yet efficient alternative to conventional methods. Through a comprehensive series of characterizations involving atomic force microscopy, scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy, the resulting graphene nanosheets demonstrate superior crystallinity compared to those obtained via the conventional method. The high-crystalline freestanding graphene nanosheets derived from this method not only facilitate easier separation but also significantly enhance the physical performance of the original materials. This method showcases the potential for scalable production of layered materials with increased yield and crystallinity, paving the way for their utilization in various applications.

We simulate the electronic and transport properties of metal/two-dimensional material/metal vertical heterostructures, with a focus on graphene, hexagonal boron nitride and two phases of molybdenum diselenide. Using density functional theory and non-equilibrium Green's function, we assess how stacking configurations and material thickness impact important properties, such as density of states, potential barriers and conductivity. For monolayers, strong orbital hybridization with the metallic electrodes significantly alters the electronic characteristics, with the formation of states within the gap of the semiconducting 2D materials. Trilayers reveal the critical role of interlayer coupling, where the middle layer retains its intrinsic properties, thus influencing the overall conductivity. Our findings highlight the potential for customized multilayer designs to optimize electronic device performance based on two-dimensional materials.

The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a thorough understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer length scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices for low- and high-end technology applications.

Collective modes of doped two-dimensional crystalline materials, namely graphene, MoS_2 and phosphorene, both monolayer and bilayer structures, are explored using the density functional theory simulations together with the random phase approximation. The many-body dielectric functions of the materials are calculated using an {\it ab initio} based model involving material-realistic physical properties. Having calculated the electron energy-loss, we calculate the collective modes of each material considering the in-phase and out-of-phase modes for bilayer structures. Furthermore, owing to many band structures and intreband transitions, we also find high-energy excitations in the systems. We explain that the material-specific dielectric function considering the polarizability of the crystalline material such as MoS_2 are needed to obtain realistic plasmon dispersions. For each material studied here, we find different collective modes and describe their physical origins.

The coexistence of multiple moire lattices in van der Waals heterostructures raises a fundamental question: how do distinct moire patterns interact and reconstruct? Here, we investigate twisted bilayer graphene (tBG) on hexagonal boron nitride (h-BN), where tBG and graphene/h-BN moire structures coexist, using conductive atomic force microscopy combined with continuum-model simulations. We show that reconstruction between these moire lattices-moire-moire reconstruction-manifests across multiple length scales, giving rise to diverse commensurate double-moire phases. Locally, the stacking registry between the two moire lattices is uniquely selected by the global twist configuration (helical or alternate), mediated by rotational relaxation of the shared graphene layer. This registry, together with twist angle and strain, governs commensurate domains from C3z-symmetric to strained symmetry-modified structures. These results establish moire-moire reconstruction as a general framework for engineering structural and electronic order -- including theoretically predicted topological flat bands below the magic angle -- in multilayer moire materials.

The study of twisted two-dimensional (2D) materials, where twisting layers create moiré superlattices, has opened new opportunities for investigating topological phases and strongly correlated physics. While systems such as twisted bilayer graphene (TBG) and twisted transition metal dichalcogenides (TMDs) have been extensively studied, the broader potential of a seemingly infinite set of other twistable 2D materials remains largely unexplored. In this paper, we define "theoretically twistable materials" as single- or multi-layer structures that allow for the construction of simple continuum models of their moiré structures. This excludes, for example, materials with a "spaghetti" of bands or those with numerous crossing points at the Fermi level, for which theoretical moiré modeling is unfeasible. We present a high-throughput algorithm that systematically searches for theoretically twistable semimetals and insulators based on the Topological 2D Materials Database. By analyzing key electronic properties, we identify thousands of new candidate materials that could host rich topological and strongly correlated phenomena when twisted. We propose representative twistable materials for realizing different types of moiré systems, including materials with different Bravais lattices, valleys, and strength of spin-orbital coupling. We provide examples of crystal growth for several of these materials and showcase twisted bilayer band structures along with simplified twisted continuum models. Our results significantly broaden the scope of moiré heterostructures and provide a valuable resource for future experimental and theoretical studies on novel moiré systems.

The structure of amorphous materials has been debated since the 1930's as a binary question: amorphous materials are either Zachariasen continuous random networks (Z-CRNs) or Z-CRNs containing crystallites. It was recently demonstrated, however, that amorphous diamond can be synthesized in either form. Here we address the question of the structure of single-atom-thick amorphous monolayers. We reanalyze the results of prior simulations for amorphous graphene and report kinetic Monte Carlo simulations based on alternative algorithms. We find that crystallite-containing Z-CRN is the favored structure of elemental amorphous graphene, as recently fabricated, whereas the most likely structure of binary monolayer amorphous BN is altogether different than either of the two long-debated options: it is a compositionally disordered "pseudo-CRN" comprising a mix of B-N and noncanonical B-B and N-N bonds and containing "pseudocrystallites", namely honeycomb regions made of noncanonical hexagons. Implications for other non-elemental 2D and bulk amorphous materials are discussed.

Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine-learning-assisted design and integrated experiment-theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.

Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling. Thus far, atomically-thin p-n junctions, metal-semiconductor contacts, and metal-insulator barriers have been demonstrated. While 2D materials achieve the thinnest possible devices, precise nanoscale control over the lateral dimensions is also necessary. Here, we report the direct synthesis of sub-nanometer-wide 1D MoS2 channels embedded within WSe2 monolayers, using a dislocation-catalyzed approach. The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent interface with the embedding 2D matrix. Periodic dislocation arrays produce 2D superlattices of coherent MoS2 1D channels in WSe2. Using molecular dynamics simulations, we have identified other combinations of 2D materials where 1D channels can also be formed. The electronic band structure of these 1D channels offer the promise of carrier confinement in a direct-gap material and charge separation needed to access the ultimate length scales necessary for future electronic applications.

Advances in scaling down heterostructures and having an improved interface quality together with atomically-thin two-dimensional materials suggest a novel approach to systematically design materials. A given material can be transformed through proximity effects whereby it acquires properties of its neighbors, for example, becoming superconducting, magnetic, topologically nontrivial, or with an enhanced spin-orbit coupling. Such proximity effects not only complement the conventional methods of designing materials by doping or functionalization, but can also overcome their various limitations. In proximitized materials it is possible to realize properties that are not present in any constituent region of the considered heterostructure. While the focus is on magnetic and spin-orbit proximity effects with their applications in spintronics, the outlined principles provide also a broader framework for employing other proximity effects to tailor materials and realize novel phenomena.

The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all-van der Waals FGT/O-FGT/hBN heterostructure is demonstrated. The antiferromagnetic O-FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage-controlled magnetization switching, highlighting the potential of FGT-based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high-performance magnetic devices.

Two-dimensional (2D) magnetism in atomically thin van der Waals (vdW) monolayers and heterostructures has attracted significant attention due to its promising potential for next-generation spintronic and quantum technologies. A key factor in stabilizing long-range magnetic order in these systems is magnetic anisotropy, which plays a crucial role in overcoming the limitations imposed by the Mermin-Wagner theorem. This review provides a comprehensive theoretical and experimental overview of the importance of magnetic anisotropy in enabling intrinsic 2D magnetism and shaping the electronic, magnetic, and topological properties of 2D vdW materials. We begin by summarizing the fundamental mechanisms that determine magnetic anisotropy, emphasizing the contributions from strong ligand spin-orbit coupling of ligand atoms and unquenched orbital magnetic moments. We then examine a range of material engineering approaches, including alloying, doping, electrostatic gating, strain, and pressure, that have been employed to effectively tune magnetic anisotropy in these materials. Finally, we discuss open challenges and promising future directions in this rapidly advancing field. By presenting a broad perspective on the role of magnetic anisotropy in 2D magnetism, this review aims to stimulate ongoing efforts and new ideas toward the realization of robust, room-temperature applications based on 2D vdW magnetic materials and their heterostructures.

The detection of fractionally charged quasiparticles, which arise in the fractional quantum Hall regime, is of fundamental importance for probing their exotic quantum properties. While electronic interferometers have been central to probe their statistical properties, their interpretation is often complicated by bulk-edge interactions. Antidots, potential hills in the quantum Hall regime, are particularly valuable in this context, as they overcome the geometric limitations of conventional designs and act as controlled impurities within a quantum point contact. Furthermore, antidots allow for quasiparticle charge detection through straightforward conductance measurements, replacing the need for more demanding techniques. In this work, we employ a gate-defined bilayer graphene antidot operating in the Coulomb-dominated regime to study quasiparticle tunneling in both integer and fractional quantum Hall states. We show that the gate-voltage period and the oscillation slope directly reveal the charge of the tunneling quasiparticles, providing a practical method to measure fractional charge in graphene. We report direct measurements of fractional charge, finding q = e/3 at ν= 4/3, 5/3 and 7/3, q = 2e/3 at ν= 2/3 and q = 3e/5 at ν= 3/5, while at ν= 8/3 we observe signatures of both e/3 and 2e/3 tunneling charge. The simplicity and tunability of this design open a pathway to extend antidot-based charge measurements to other van der Waals materials, establishing antidots as a powerful and broadly applicable platform to study the quantum Hall effect.

Advances in research have sparked an increasing curiosity in understanding the plasmonic excitation properties of molecular-scale systems. Polycyclic aromatic hydrocarbons, as the fundamental building blocks of graphene, have been documented to possess plasmonic properties through experimental observations, making them prime candidates for investigation. By doping different elements, the conjugated structure of the molecule can be altered. In this study, the plasmonic excitation properties influenced by conjugated structures in peropyrene and its derivatives are investigated through first-principles calculations that combine the plasmonicity index, generalized plasmonicity index and transition contribution maps. For molecular plasmonic excitation, the conjugated structure can influence the oscillation modes of valence electrons, which is pivotal in yielding distinct field enhancement characteristics. Furthermore, charge doping can lead to a certain degree of alteration in the conjugated structures, and the doping of elements will result in varying degrees of such alteration, thereby initiating different trends in the evolution of plasmonic resonance. This further enhances the tunability of molecular plasmonic resonance. The results provide novel insights into the development and utilization of molecular plasmonic devices in practical applications.

Motivated by recent observations of symmtry broken phases in lightly-doped multilayer graphene, we investigate magnetic phase transitions in a generalized electron gas model with four-component electron spin. This model simplifies the problem with a parabolic dispersion band, abstracting away the details of the graphene band structure to focus solely on the effects of the Coulomb interaction. We report four findings: 1) In the Hartree-Fock approximation, we observe that the paramagnetic state undergoes a sequence of density-driven, first-order phase transitions, progressively depopulating electrons from each spin component until achieving complete polarization within a very narrow density window where 1.2<r_s<2 (r_s being the electron gas parameter). 2) Further incorporating the correlation energy via the Bohm-Pines random-phase approximation shows that the cascade of transitions obtained within Hartree-Fock approximation is replaced by a single ferromagnetic phase transition at r_s = 6.12. 3) The disappearance of cascade is due to the correlation energy difference between the four-component paramagnetic state and symmetry-broken phases, which is nearly an order of magnitude more negative than the corresponding Hartree-Fock energy difference for 1.2 < r_s < 2. 4) The transition from the paramagnetic state to the fully polarized state at r_s=6.12 is governed by the balance between exchange and correlation energies, a competition that cannot be captured by mean-field approximations to models featuring effective (density-dependent) delta-function interactions, such as the Stoner model. We use the insights from our model to comment on the phase diagram of multilayer graphene electron gas.

Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezos which drive the scanning probe, and thermally-driven slow relative drift between probe and sample, produce systematic errors in the extraction of lattice vectors. In this Letter, we identify the errors and provide a protocol to correct for them. Applying this protocol to an ensemble of ten successive scans of near-magic-angle twisted bilayer graphene, we are able to reduce our errors in extracting lattice vectors to less than 1%. This translates to extracting twist angles with a statistical uncertainty less than 0.001° and uniaxial heterostrain with uncertainty on the order of 0.002%.

Using an evolutionary algorithm in combination with first-principles density functional theory calculations, we identify two-dimensional (2D) CaP_3 monolayer as a new Dirac semimetal due to inversion and nonsymmorphic spatial symmetries of the structure. This new topological material, composed of light elements, exhibits high structural stability (higher than the phase known in the literature), which is confirmed by thermodynamic and kinetic stability analysis. Moreover, it satisfies the electron filling criteria, so that its Dirac state is located near the Fermi level. The existence of the Dirac state predicted by the theoretical symmetry analysis is also confirmed by first-principles electronic band structure calculations. We find that the energy position of the Dirac state can be tuned by strain, while the Dirac state is unstable against an external electric field since it breaks the spatial inversion symmetry. Our findings should be instrumental in the development of 2D Dirac fermions based on light elements for their application in nanoelectronic devices and topological electronics.

Among a huge variety of known two-dimensional materials, some of them have anisotropic crystal structures; examples include so different systems as a few-layer black phoshphorus (phosphorene), beryllium nitride BeN_4, van der Waals magnet CrSBr, rhenium dichalgogenides ReX_2. As a consequence, their optical and electronic properties turn out to be highly anisotropic as well. In some cases, the anisotropy results not just in a smooth renormalization of observable properties in comparison with the isotropic case but in the appearance of dramatically new physics. The examples are hyperbolic plasmons and excitons, strongly anisotropic ordering of adatoms at the surface of two-dimensional or van der Waals materials, essential change of transport and superconducting properties. Here, we present a systematic review of electronic structure, transport and optical properties of several representative groups of anisotropic two-dimensional materials including semiconductors, anisotropic Dirac and semi-Dirac materials, as well as superconductors.

Disorder and defective coordination in the catalytic plane are crucial for enhancing the Hydrogen Evolution Reaction (HER) on two-dimensional catalysts. Amorphous materials are disordered, making them catalytically adaptive for many reactions. In this work, the HER capabilities of Monolayer Amorphous Carbon (MAC) were studied in comparison with crystalline carbon derivatives, such as pristine graphene (GE) and graphyne derivatives. MAC generated from melt-quench simulations revealed a diverse framework of predominantly sp2 and sp3 carbons with numerous 5-, 6-, and 7-membered rings. Density Functional Theory (DFT) calculations investigated free-energy variations in hydrogen adsorption for each material. According to Sabatier's principle, optimum activity is achieved when the Gibbs free energy (Delta GH) change approaches zero. Crystalline carbon materials possess limited active sites, with beta-graphyne showing the best Delta GH value of +0.34 eV. The adsorption study for MAC was conducted in 30 distinct local environments, where core structural properties were analyzed against varying radii. Calculations showed a Delta GH distribution for MAC ranging from -0.02 eV to +1.35 eV. To evaluate activity across the entire MAC surface, a MACE MLIP foundation model was finetuned, achieving optimal energy and force fitting of 1.67 meV/atom and 29.15 meV/A, respectively. The MLIP predicted Delta GH values from -0.91 eV to +1.70 eV, with approximately 15% of sites exhibiting values below +0.25 eV. Feature analysis revealed that 7-membered rings, curvature, and ripple height enhance HER activity. Our findings suggest that, with careful optimization of local features, MAC can be tuned to compete with noble metal catalysts.

Raman spectroscopy is a key tool for graphene characterization, yet its application to graphene grown on silicon carbide (SiC) is strongly limited by the intense and variable second-order Raman response of the substrate. This limitation is critical for buffer layer graphene, a semiconducting interfacial phase, whose vibrational signatures are overlapped with the SiC background and challenging to be reliably accessed using conventional reference-based subtraction, due to strong spatial and experimental variability of the substrate signal. Here we present SpectraFormer, a transformer-based deep learning model that reconstructs the SiC Raman substrate contribution directly from post-growth partially masked spectroscopic data without relying on explicit reference measurements. By learning global correlations across the entire Raman shift range, the model captures the statistical structure of the SiC background and enables accurate reconstruction of its contribution in mixed spectra. Subtraction of the reconstructed substrate signal reveals weak vibrational features associated with ZLG that are inaccessible through conventional analysis methods. The extracted spectra are validated by ab initio vibrational calculations, allowing assignment of the resolved features to specific modes and confirming their physical consistency. By leveraging a state-of-the-art attention-based deep learning architecture, this approach establishes a robust, reference-free framework for Raman analysis of graphene on SiC and provides a foundation, compatible with real-time data acquisition, to its integration into automated, closed-loop AI-assisted growth optimization.

Most recent exciting experimental advances introduced buckled and flat borophene nanomembranes as new members to the advancing family of two-dimensional (2D) materials. Borophene, is the boron atom analogue of graphene with interesting properties suitable for a wide variety of applications. In this investigation, we conducted extensive first-principles density functional theory simulations to explore the application of four different flat borophene films as anode materials for Al, Mg, Na or Li-ion batteries. In our modelling, first the strongest binding sites were predicted and next we gradually increased the adatoms coverage until the maximum capacity was reached. Bader charge analysis was employed to evaluate the charge transfer between the adatoms and the borophene films. Nudged elastic band method was also utilized to probe the ions diffusions. We calculated the average atom adsorption energies and open-circuit voltage profiles as a function of adatoms coverage. Our findings propose the flat borophene films as electrically conductive and thermally stable anode materials with ultra high capacities of 2480 mAh/g, 1640 mAh/g and 2040 mAh/g for Mg, Na or Li-ion batteries, respectively, which distinctly outperform not only the buckled borophene but also all other 2D materials. Our study may provide useful viewpoint with respect to the possible application of flat borophene films for the design of high capacity and light weight advanced rechargeable ion batteries.

The stacking-dependent polarization and excitonic response of MoS_2/MoSe_2 heterostructures were investigated using GW+BSE many-body perturbation theory. While homobilayer MoS_2 exhibited a switchable interlayer dipole driven by registry-induced symmetry breaking, the MoS_2/MoSe_2 hetero-interface remained pinned by the intrinsic chemical potential mismatch between sulfur and selenium. In 2L-MoS_2/MoSe_2 trilayers, the stacking sequence enabled a deterministic control of photogenerated electrons between the central and bottom MoS_2 layers, governed by internal electric fields and quasiparticle band-edge shifts of 60--70~meV. Our calculations predicted a 36~meV interlayer excitonic shift, in remarkable agreement with recent experiments. These results elucidate the microscopic link between atomic registry and many-body interactions, establishing transition metal dichalcogenide trilayers as a potential platform for sliding ferroelectricity and programmable optoelectronic functionalities.

Unconventional superconductivity can emerge in various forms in strongly correlated systems. Historically, the most extensively studied examples include nodal and triplet pairing, which were experimentally detected in cuprates and superfluid helium-3, respectively. Beyond these canonical cases, there are also nematic superconductors, in which the rotational symmetry of the lattice is broken in the superconducting state. While there are several examples of nematic superconductors whose pairing emerges inside a preexisting nematic normal state, experimental evidence for superconducting states that intrinsically break rotational symmetry on their own has been exceedingly scarce. Here, we report the experimental realization and identification of an intrinsic multi-component nodal nematic superconducting state in magic-angle twisted trilayer graphene (MATTG). By integrating tunneling spectroscopy with quantum transport measurements, we directly probe the symmetry of low-energy superconducting quasiparticles. Deep inside the superconducting state, we observe a pronounced two-fold anisotropy in the zero-bias tunneling conductance under an in-plane magnetic field, which is strongly suppressed together with superconductivity as the temperature or perpendicular magnetic field is increased. Remarkably, the major axis of anisotropy rotates by up to 90^{circ} across the superconducting dome, indicating an intrinsic, field- and density-tunable symmetry of the low-energy excitations. These behaviors imply a nodal superconducting state in MATTG that spontaneously breaks the six-fold rotational symmetry of the moiré superlattice. Our results establish moiré graphene as a versatile platform for realizing and interrogating nodal nematic superconductivity, opening a new avenue for exploring unconventional symmetry-breaking superconducting states in two-dimensional materials.

Dirac and Weyl materials refer to a class of solid materials which host low-energy quasiparticle excitations that can be described by the Dirac and Weyl equations in relativistic quantum mechanics. Starting with the advent of graphene as the first prominent example, these materials have been attracting tremendous interest owing to their novel fundamental properties as well as the great potential for applications. Here we introduce the basic concepts and notions related to Dirac and Weyl materials and briefly review some recent works in this field, particularly on the conceptual development and the possible spintronics/pseudospintronics applications.

Electrical control of individual spins and photons in solids is key for quantum technologies, but scaling down to small, static systems remains challenging. Here, we demonstrate nanoscale electrical tuning of neutral and charged excitons in monolayer WSe2 using 1-nm carbon nanotube gates. Electrostatic simulations reveal a confinement radius below 15 nm, reaching the exciton Bohr radius limit for few-layer dielectric spacing. In situ photoluminescence spectroscopy shows gate-controlled conversion between neutral excitons, negatively charged trions, and biexcitons at 4 K. Important for quantum information processing applications, our measurements indicate gating of a local 2D electron gas in the WSe2 layer, coupled to photons via trion transitions with binding energies exceeding 20 meV. The ability to deterministically tune and address quantum emitters using nanoscale gates provides a pathway towards large-scale quantum optoelectronic circuits and spin-photon interfaces for quantum networking.

The presence of point defects such as vacancies plays an important role in material design. Here, we demonstrate that a graph neural network (GNN) model trained only on perfect materials can also be used to predict vacancy formation energies (E_{vac}) of defect structures without the need for additional training data. Such GNN-based predictions are considerably faster than density functional theory (DFT) calculations with reasonable accuracy and show the potential that GNNs are able to capture a functional form for energy predictions. To test this strategy, we developed a DFT dataset of 508 E_{vac} consisting of 3D elemental solids, alloys, oxides, nitrides, and 2D monolayer materials. We analyzed and discussed the applicability of such direct and fast predictions. We applied the model to predict 192494 E_{vac} for 55723 materials in the JARVIS-DFT database.

The amplitude of ground state superconducting energy gap Δ(0) and relative jump in electronic specific heat at the transition temperature, ΔC{/}γT_c, are primary fundamental parameters of any superconductor. There are several well-established techniques to measure these values for bulk samples. However, there is limited number of techniques which can be applied to measure these parameters in atomically thin superconductors. Here we proposed a new approach to extract Δ(0) and ΔC{/}γT_c in atomically thin superconductors by utilizing perpendicular, Bc2,perp(T) (when magnetic field is applied in perpendicular direction to the film surface), and parallel, Bc2,||(T) (when magnetic field is applied in parallel direction to the film surface), upper critical field data. Deduced parameters for few layers thick Al, Sn, NbSe2, MoS2, magic angle twisted trilayer graphene (MATTG), and WTe2 are well matched values expected for strong- and moderately strong-coupled electron-phonon mediated superconductors. Observed, in many atomically thin superconductors, an enhancement of Bc2,||(0) above the Pauli-Clogston-Chandrasekhar limiting field (i.e., magnetic field required to break the Cooper pair) is explained based on the sample geometry, without an assumption that some exotic pairing mechanism, for instance, Ising-type, is emergent in these materials.

The recently proposed term "heterostructured (HS) materials" serves as an umbrella classification encompassing a wide range of materials that hold great promise for enhanced mechanical properties. Most HS materials exhibit back-stress strengthening, as is typical for all plastically non-homogeneous materials. To better embody the distinctiveness of materials crafted via innovative heterostructuring, here we introduce the concept of "structural gradient hardening" (SGH), which captures an essential feature of HS materials and complements traditional strengthening mechanisms. SGH refers to the extra strengthening that arises from a characteristic gradient structure introduced by heterostructuring, beyond what is predicted by the rule of mixtures. This distinction is useful, as the overall back stress can in fact be partitioned into Type I and Type II components, with the latter specifically quantifying the extra hardening originating from the structural and strain gradients established by heterostructuring, as articulated in this Viewpoint article.

Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remains unclear and a unified methodology is lacking. Here, we present and analyse a comprehensive and efficient approach to compute the intrinsic, phonon-limited drift and Hall carrier mobilities of semiconductors, within the framework of the first-principles Boltzmann transport equation. The methodology exploits a novel approach for estimating quadrupole tensors and including them in the electron-phonon interactions, and capitalises on a rigorous and efficient procedure for numerical convergence. The accuracy reached in this work allows to assess common approximations, including the role of exchange and correlation functionals, spin-orbit coupling, pseudopotentials, Wannier interpolation, Brillouin-zone sampling, dipole and quadrupole corrections, and the relaxation-time approximation. A detailed analysis is showcased on ten prototypical semiconductors, namely diamond, silicon, GaAs, 3C-SiC, AlP, GaP, c-BN, AlAs, AlSb, and SrO. By comparing this extensive dataset with available experimental data, we explore the intrinsic nature of phonon-limited carrier transport and magnetotransport phenomena in these compounds. We find that the most accurate calculations predict Hall mobilities up to a factor of two larger than experimental data; this could point to promising experimental improvements in the samples quality, or to the limitations of density-function theory in predicting the carrier effective masses and overscreening the electron-phonon matrix elements. By setting tight standards for reliability and reproducibility, the present work aims to facilitate validation and verification of data and software towards predictive calculations of transport phenomena in semiconductors.

Large language models (LLMs) such as generative pretrained transformers (GPTs) have shown potential for various commercial applications, but their applicability for materials design remains underexplored. In this article, we introduce AtomGPT, a model specifically developed for materials design based on transformer architectures, to demonstrate the capability for both atomistic property prediction and structure generation. We show that a combination of chemical and structural text descriptions can efficiently predict material properties with accuracy comparable to graph neural network models, including formation energies, electronic bandgaps from two different methods and superconducting transition temperatures. Furthermore, we demonstrate that AtomGPT can generate atomic structures for tasks such as designing new superconductors, with the predictions validated through density functional theory calculations. This work paves the way for leveraging LLMs in forward and inverse materials design, offering an efficient approach to the discovery and optimization of materials.

Transition metal dichalcogenides (TMDs) and their Weyl semimetal phases, such as MoTe_2, have attracted significant attention for spin-orbit torque applications due to their efficient charge-to-spin conversion. However, whether this conversion originates predominantly from the bulk or the interface remains unclear. Here, we investigate spin-charge interconversion in MoTe_2 using spin-pumping and spin-torque ferromagnetic resonance (SP-FMR and ST-FMR). Thickness-dependent measurements reveal large spin-to-charge conversion and spin-torque efficiencies that are essentially independent of MoTe_2 thickness, indicating that the conversion is predominantly governed by the Rashba-Edelstein effect at the Py/MoTe_2 interface rather than by bulk spin transport. This behavior contrasts with the characteristic thickness dependence observed in Pt heterostructures and is further supported by bidirectional SP-FMR and interface-separation measurements. Our results highlight the dominant role of the Py/MoTe_2 interface in enabling efficient spin-charge conversion and spin-orbit torques in TMD-based spintronic devices. These findings highlight the potential of sputtered MoTe_2/Py heterostructures for low-power spintronic applications, including magnetic memory and logic devices.

Mo2P as a new member of the advancing two-dimensional (2D) materials family has been theoretically identified in this study. We conducted extensive density functional theory calculations to explore the crystal structure, dynamical stability, mechanical response, electronic structure and optical properties. Mo2P was found to be metallic with the Fermi energy locating at the d bands of transition metal Mo. A high reflectivity of ~100% at low energies less than 1 eV was observed, introducing Mo2P as a potential candidate for photonic and optoelectronic applications such as transmitting electromagnetic waves devices. Our calculations confirm that the novel 2D structure is dynamically stable and can withstand at high temperatures including 1000 K. Mo2P was found to yield high tensile strength and elastic modulus of 12 GPa.nm and 56 GPa.nm, respectively. We particularly evaluated the application of Mo2P as an anode material for Li and Na-ion rechargeable batteries.

Coupling together distinct correlated and topologically non-trivial electronic phases of matter can potentially induce novel electronic orders and phase transitions among them. Transition metal dichalcogenide compounds serve as a bedrock for exploration of such hybrid systems. They host a variety of exotic electronic phases and their Van der Waals nature enables to admix them, either by exfoliation and stacking or by stoichiometric growth, and thereby induce novel correlated complexes. Here we investigate the compound 4Hb-TaS_2 that interleaves the Mott-insulating state of 1T-TaS_2 and the putative spin liquid it hosts together with the metallic state of 2H-TaS_2 and the low temperature superconducting phase it harbors. We reveal a thermodynamic phase diagram that hosts a first order quantum phase transition between a correlated Kondo cluster state and a flat band state in which the Kondo cluster becomes depleted. We demonstrate that this intrinsic transition can be induced by an electric field and temperature as well as by manipulation of the interlayer coupling with the probe tip, hence allowing to reversibly toggle between the Kondo cluster and the flat band states. The phase transition is manifested by a discontinuous change of the complete electronic spectrum accompanied by hysteresis and low frequency noise. We find that the shape of the transition line in the phase diagram is determined by the local compressibility and the entropy of the two electronic states. Our findings set such heterogeneous structures as an exciting platform for systematic investigation and manipulation of Mott-metal transitions and strongly correlated phases and quantum phase transitions therein.

This review presents the elastic theory of low-dimensional (one- and two-dimensional) continua and its applications in bio- and nano-structures. First, the curve and surface theory, as the geometric representation of the low-dimensional continua, is briefly described through Cartan moving frame method. The elastic theory of Kirchhoff rod, Helfrich rod, bending-soften rod, fluid membrane, and solid shell is revisited. Secondly, the application and availability of the elastic theory of low-dimensional continua in bio-structures, including short DNA rings, lipid membranes, and cell membranes, are discussed. The kink stability of short DNA rings is addressed by using the theory of Kirchhoff rod, Helfrich rod, and bending-soften rod. The lipid membranes obey the theory of fluid membrane. A cell membrane is simplified as a composite shell of lipid bilayer and membrane skeleton, which is a little similar to the solid shell. It is found that the membrane skeleton enhances highly the mechanical stability of cell membranes. Thirdly, the application and availability of the elastic theory of low-dimensional continua in nano-structures, including graphene and carbon nanotubes, are discussed. A revised Lenosky lattice model is proposed based on the local density approximation. Its continuum form up to the second order terms of curvatures and strains is the same as the free energy of 2D solid shells. Several typical mechanical properties of carbon nanotubes are revisited and investigated based on this continuum form. It is possible to avoid introducing the controversial concepts, the Young's modulus and thickness of graphene and single-walled carbon nanotubes, with this continuum form.

Single-atom catalysts (SACs) have emerged as frontiers for catalyzing chemical reactions, yet the diverse combinations of active elements and support materials, the nature of coordination environments, elude traditional methodologies in searching optimal SAC systems with superior catalytic performance. Herein, by integrating multi-branch Convolutional Neural Network (CNN) analysis models to hybrid descriptor based activity volcano plot, 2D SAC system composed of diverse metallic single atoms anchored on six type of 2D supports, including graphitic carbon nitride, nitrogen-doped graphene, graphene with dual-vacancy, black phosphorous, boron nitride, and C2N, are screened for efficient CO2RR. Starting from establishing a correlation map between the adsorption energies of intermediates and diverse electronic and elementary descriptors, sole singular descriptor lost magic to predict catalytic activity. Deep learning method utilizing multi-branch CNN model therefore was employed, using 2D electronic density of states as input to predict adsorption energies. Hybrid-descriptor enveloping both C- and O-types of CO2RR intermediates was introduced to construct volcano plots and limiting potential periodic table, aiming for intuitive screening of catalyst candidates for efficient CO2 reduction to CH4. The eDOS occlusion experiments were performed to unravel individual orbital contribution to adsorption energy. To explore the electronic scale principle governing practical engineering catalytic CO2RR activity, orbitalwise eDOS shifting experiments based on CNN model were employed. The study involves examining the adsorption energy and, consequently, catalytic activities while varying supported single atoms. This work offers a tangible framework to inform both theoretical screening and experimental synthesis, thereby paving the way for systematically designing efficient SACs.

Single-walled carbon nanotubes (SWNTs) are potential materials for future nanoelectronics. Since the electronic and optical properties of SWNTs strongly depend on tube diameter and chirality, obtaining SWNTs with narrow (n,m) chirality distribution by selective growth or chemical separation has been an active area of research. Here, we demonstrate that a new, bimetallic FeRu catalyst affords SWNT growth with narrow diameter and chirality distribution in methane CVD. At 600C, methane CVD on FeRu catalyst produced predominantly (6,5) SWNTs according to Uv-vis-NIR absorption and photoluminescence excitation/emission (PLE) spectroscopic characterization. At 850C, the dominant semiconducting species produced are (8,4), (7,6) and (7,5) SWNTs, with much narrower distributions in diameter and chirality than materials grown by other catalysts. Further, we show that narrow-diameter/chirality growth combined with chemical separation by ion exchange chromatography (IEC) greatly facilitate achieving single-(m,n) SWNT samples, as demonstrated by obtaining highly enriched (8,4) SWNTs with near elimination of metallic SWNTs existing in the as-grown material.

Single walled carbon nanotubes exhibit advanced electrical and surface properties useful for high performance nanoelectronics. Important to future manufacturing of nanotube circuits is large scale assembly of SWNTs into aligned forms. Despite progress in assembly and oriented synthesis, pristine SWNTs in aligned and close-packed form remain elusive and needed for high current, speed and density devices through collective operations of parallel SWNTs. Here, we develop a Langmuir Blodgett method achieving monolayers of aligned SWNTs with dense packing, central to which is a non covalent polymer functionalization by PmPV imparting high solubility and stability of SWNTs in an organic solvent DCE. Pressure cycling or annealing during LB film compression reduces hysteresis and facilitates high degree alignment and packing of SWNTs characterized by microscopy and polarized Raman spectroscopy. The monolayer SWNTs are readily patterned for device integration by microfabrication, enabling the highest currents 3mA through the narrowest regions packed with aligned SWNTs thus far.

When hydrogen atoms occupy interstitial sites in metal lattices, they form metal hydrides (MHx), whose structural and electronic properties can differ significantly from the host metals. Owing to the small size of hydrogen atom and its unique interactions with the host metal, MHx is of broad interest in both fundamental science and technological applications. Determining where the hydrogen is located within the MHx, and whether it orders on the partially occupied interstitial sites is crucial for predicting and understanding the resultant physical and electronic properties of the hydride. Directly imaging hydrogen within a host material remains a major challenge due to its weak interaction with X-rays and electrons in conventional imaging techniques. Here, we employ electron ptychography, a scanning transmission electron microscopy technique, to image the three-dimensional (3D) distribution of H atoms in Palladium hydrides (PdHx) nanocubes, one of the most studied and industrially relevant MHx materials. We observe an unexpected one-dimensional superlattice ordering of hydrogen within the PdHx nanocubes and 3D hydrogen clustering in localized regions within PdHx nanocubes, revealing spatial heterogeneity in metal hydride nanoparticles previously inaccessible by other methods.

The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimensional materials, the source code of which we make openly available. Our platform is designed to be accurate, reliable, fast, and versatile in integrating new materials, making it suitable for everyday laboratory work. The implementation allows fully automated scanning and analysis of wafers with an average inference time of 100 ms for images of 2.3 Mpixels. The developed detection algorithm is based on a combination of the flakes' optical contrast toward the substrate and their geometric shape. We demonstrate that it is able to detect the majority of exfoliated flakes of various materials, with an average recall (AR50) between 67% and 89%. We also show that the algorithm can be trained with as few as five flakes of a given material, which we demonstrate for the examples of few-layer graphene, WSe_2, MoSe_2, CrI_3, 1T-TaS_2 and hexagonal BN. Our platform has been tested over a two-year period, during which more than 10^6 images of multiple different materials were acquired by over 30 individual researchers.

In the context of quantum thermodynamics, quantum batteries have emerged as promising devices for energy storage and manipulation. Over the past decade, substantial progress has been made in understanding the fundamental properties of quantum batteries, with several experimental implementations showing great promise. This Perspective provides an overview of the solid-state materials platforms that could lead to fully operational quantum batteries. After briefly introducing the basic features of quantum batteries, we discuss organic microcavities, where superextensive charging has already been demonstrated experimentally. We then explore other materials, including inorganic nanostructures (such as quantum wells and dots), perovskite systems, and (normal and high-temperature) superconductors. Key achievements in these areas, relevant to the experimental realization of quantum batteries, are highlighted. We also address challenges and future research directions. Despite their enormous potential for energy storage devices, research into advanced materials for quantum batteries is still in its infancy. This paper aims to stimulate interdisciplinarity and convergence among different materials science research communities to accelerate the development of new materials and device architectures for quantum batteries.

The discovery of topological quantum states marks a new chapter in both condensed matter physics and materials sciences. By analogy to spin electronic system, topological concepts have been extended into phonons, boosting the birth of topological phononics (TPs). Here, we present a high-throughput screening and data-driven approach to compute and evaluate TPs among over 10,000 materials. We have clarified 5014 TP materials and classified them into single Weyl, high degenerate Weyl, and nodal-line (ring) TPs. Among them, three representative cases of TPs have been discussed in detail. Furthermore, we suggest 322 TP materials with potential clean nontrivial surface states, which are favorable for experimental characterizations. This work significantly increases the current library of TP materials, which enables an in-depth investigation of their structure-property relations and opens new avenues for future device design related to TPs.

Accelerated materials discovery is an urgent demand to drive advancements in fields such as energy conversion, storage, and catalysis. Property-directed generative design has emerged as a transformative approach for rapidly discovering new functional inorganic materials with multiple desired properties within vast and complex search spaces. However, this approach faces two primary challenges: data scarcity for functional properties and the multi-objective optimization required to balance competing tasks. Here, we present a multi-property-directed generative framework designed to overcome these limitations and enhance site symmetry-compliant crystal generation beyond P1 (translational) symmetry. By incorporating Wyckoff-position-based data augmentation and transfer learning, our framework effectively handles sparse and small functional datasets, enabling the generation of new stable materials simultaneously conditioned on targeted space group, band gap, and formation energy. Using this approach, we identified previously unknown thermodynamically and lattice-dynamically stable semiconductors in tetragonal, trigonal, and cubic systems, with bandgaps ranging from 0.13 to 2.20 eV, as validated by density functional theory (DFT) calculations. Additionally, we assessed their thermoelectric descriptors using DFT, indicating their potential suitability for thermoelectric applications. We believe our integrated framework represents a significant step forward in generative design of inorganic materials.

Topological kagome systems have been a topic of great interest in condensed matter physics due totheir unique electronic properties. The vanadium-based kagome materials are particularly intrigu-ing since they exhibit exotic phenomena such as charge density wave (CDW) and unconventionalsuperconductivity. The origin of these electronic instabilities is not fully understood, and the re-cent discovery of a charge density wave in ScV6Sn6provides a new avenue for investigation. In thiswork, we investigate the electronic structure of the novel kagome metal ScV6Sn6using angle resolvedphotoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and first-principlesdensity functional theory calculations. Our analysis reveals for the first time the temperature-dependent band changes of ScV6Sn6and identifies a new band that exhibits a strong signatureof a structure with CDW below the critical temperature. Further analysis revealed that this newband is due to the surface kagome layer of the CDW structure. In addition, a Lifshitz transition isidentified in the ARPES spectra that is related to the saddle point moving across the Fermi levelat the critical temperature for the CDW formation. This result shows the CDW behavior may alsobe related to nesting of the saddle point, similar to related materials. However, no energy gap is observed at the Fermi level and thus the CDW is not a typical Fermi surface nesting scenario. These results provide new insights into the underlying physics of the CDW in the kagome materials and could have implications for the development of materials with new functionality.

Recent advances in photonic optimization have enabled calculation of performance bounds for a wide range of electromagnetic objectives, albeit restricted to single-material systems. Motivated by growing theoretical interest and fabrication advances, we present a framework to bound the performance of photonic heterostructures and apply it to investigate maximum absorption characteristics of multilayer films and compact, free-form multi-material scatterers. Limits predict trends seen in topology-optimized geometries -- often coming within factors of two of specific designs -- and may be exploited in conjunction with inverse designs to predict when heterostructures are expected to outperform their optimal single-material counterparts.

We present 1d-qt-ideal-solver, an open-source Python library for simulating one-dimensional quantum tunneling dynamics under idealized coherent conditions. The solver implements the split-operator method with second-order Trotter-Suzuki factorization, utilizing FFT-based spectral differentiation for the kinetic operator and complex absorbing potentials to eliminate boundary reflections. Numba just-in-time compilation achieves performance comparable to compiled languages while maintaining code accessibility. We validate the implementation through two canonical test cases: rectangular barriers modeling field emission through oxide layers and Gaussian barriers approximating scanning tunneling microscopy interactions. Both simulations achieve exceptional numerical fidelity with machine-precision energy conservation over femtosecond-scale propagation. Comparative analysis employing information-theoretic measures and nonparametric hypothesis tests reveals that rectangular barriers exhibit moderately higher transmission coefficients than Gaussian barriers in the over-barrier regime, though Jensen-Shannon divergence analysis indicates modest practical differences between geometries. Phase space analysis confirms complete decoherence when averaged over spatial-temporal domains. The library name reflects its scope: idealized signifies deliberate exclusion of dissipation, environmental coupling, and many-body interactions, limiting applicability to qualitative insights and pedagogical purposes rather than quantitative experimental predictions. Distributed under the MIT License, the library provides a deployable tool for teaching quantum mechanics and preliminary exploration of tunneling dynamics.

Hybrid superconductor-semiconductor systems have received a great deal of attention in the last few years because of their potential for quantum engineering, including novel qubits and topological devices. The proximity effect, the process by which the semiconductor inherits superconducting correlations, is an essential physical mechanism of such hybrids. Recent experiments have demonstrated the proximity effect in hole-based semiconductors, but, in contrast to electrons, the precise mechanism by which the hole bands acquire superconducting correlations remains an open question. In addition, hole spins exhibit a complex strong spin-orbit interaction, with largely anisotropic responses to electric and magnetic fields, further motivating the importance of understanding the interplay between such effects and the proximity effect. In this work, we analyze this physics with focus on germanium-based two-dimensional gases. Specifically, we develop an effective theory supported by full numerics, allowing us to extract various analytical expressions and predict different types of superconducting correlations including non-standard forms of singlet and triplet pairing mechanisms with non-trivial momentum dependence; as well as different Zeeman and Rashba spin-orbit contributions. This, together with their precise dependence on electric and magnetic fields, allows us to make specific experimental predictions, including the emergence of f-type superconductivity, Bogoliubov Fermi surfaces, and gapless regimes caused by large in-plane magnetic fields.

CONSPECTUS: Two-dimensional (2D) compound materials are promising materials for use in electronics, optoelectronics, flexible devices, etc. because they are ultrathin and cover a wide range of properties. Among all methods to prepare 2D materials, chemical vapor deposition (CVD) is promising because it produces materials with a high quality and reasonable cost. So far, much efforts have been made to produce 2D compound materials with large domain size, controllable number of layers, fast-growth rate, and high quality features, etc. However, due to the complicated growth mechanism like sublimation and diffusion processes of multiple precursors, maintaining the controllability, repeatability, and high quality of CVD grown 2D binary and ternary materials is still a big challenge, which prevents their widespread use. Here, taking 2D transition metal dichalcogenides (TMDCs) as examples, we review current progress and highlight some promising growth strategies for the growth of 2D compound materials. The key technology issues which affect the CVD process, including non-metal precursor, metal precursor, substrate engineering, temperature, and gas flow, are discussed. Also, methods in improving the quality of CVD-grown 2D materials and current understanding on their growth mechanism are highlighted. Finally, challenges and opportunities in this field are proposed. We believe this review will guide the future design of controllable CVD systems for the growth of 2D compound materials with good controllability and high quality, laying the foundations for their potential applications.

Atomically thin metallic chains serve as pivotal systems for studying quantum transport, with their conductance strongly linked to the orbital picture. Here, we report a non-monotonic electro-mechanical response in a gold-ferrocene junction, characterized by an unexpected conductance increase over a factor of ten upon stretching. This response is detected in the formation of ferrocene-assisted atomic gold chain in a mechanically controllable break junction at a cryogenic temperature. DFT based calculations show that tilting of molecules inside the chain modifies the orbital overlap and the transmission spectra, leading to such non-monotonic conductance evolution with stretching. This behavior, unlike typical flat conductance plateaus observed in metal atomic chains, pinpoints the unique role of conformational rearrangements during chain elongation. Our findings provide a deeper understanding of the role of orbital hybridization in transport properties and offer new opportunities for designing nanoscale devices with tailored electro-mechanical characteristics.

Hot carriers, inheriting excess kinetic energy from high-energy photons, underpin numerous optoelectronic applications involving non-equilibrium transport processes. Current research on hot carriers has predominantly focused on inorganic materials, with little attention paid to organic-based systems due to their ultrafast energy relaxation and inefficient charge transport. Here, we overturn this paradigm by demonstrating highly mobile hot carriers in solution-processable, highly crystalline two-dimensional conjugated coordination polymer (2D c-CP) Cu3BHT (BHT = benzenehexathiol) films. Leveraging a suite of ultrafast spectroscopic and imaging techniques, we unravel the microscopic charge transport landscape in Cu3BHT films following non-equilibrium photoexcitation across temporal, spatial, and frequency domains, revealing two distinct high-mobility transport regimes. In the non-equilibrium transport regime, hot carriers achieve ultrahigh mobility of ~2,000 cm2 V-1 s-1, traversing grain boundaries up to 300 nm within a picosecond. In the quasi-equilibrium transport regime, free carriers exhibit Drude-type band-like transport with a remarkable mobility of ~400 cm2 V-1 s-1 and an intrinsic diffusion length exceeding 1 micrometer. These findings establish 2D c-CPs as versatile platforms for exploring high-mobility non-equilibrium transport, unlocking new opportunities for organic-based hot carrier applications.

In 2021 Nature Physics published a paper by Vaitiekenas, Liu, Krogstrup and Marcus titled "Zero-bias peaks at zero magnetic field in ferromagnetic hybrid nanowires". The paper reports low temperature transport measurements on semiconductor InAs nanowires with two partly overlapping shells -- a shell of EuS, a magnetic insulator, and a shell of Al, a metal that becomes superconducting at temperatures below 1.2K. The paper claims that (1) the data are consistent with induced topological superconductivity and Majorana zero modes (MZMs), and (2) that this is facilitated by the breaking of the time reversal symmetry through a direct magnetic interaction with the EuS shell. In this Matters Arising, we present an alternative explanation which is based on trivial effects that are likely to appear in the reported geometry. Specifically, first, we find that data the authors present in support of the topological superconductivity claim can originate from unintended quantum dots in their devices, a widely known likely explanation that is not being discussed in the paper. Second, our analysis of the setup, supported by our numerical micromagnetic simulations, shows similar effects could be obtained due to stray magnetic fields from the region of the EuS shell damaged during Al etching. This basic picture should come before the exotic interpretation in terms of magnetic exchange interaction with a ferromagnetic insulator.

The increasing use of two-dimensional (2D) materials in nanoelectronics demands robust metrology techniques for electrical characterization, especially for large-scale production. While atomic force microscopy (AFM) techniques like conductive AFM (C-AFM) offer high accuracy, they suffer from slow data acquisition speeds due to the raster scanning process. To address this, we introduce SparseC-AFM, a deep learning model that rapidly and accurately reconstructs conductivity maps of 2D materials like MoS_2 from sparse C-AFM scans. Our approach is robust across various scanning modes, substrates, and experimental conditions. We report a comparison between (a) classic flow implementation, where a high pixel density C-AFM image (e.g., 15 minutes to collect) is manually parsed to extract relevant material parameters, and (b) our SparseC-AFM method, which achieves the same operation using data that requires substantially less acquisition time (e.g., under 5 minutes). SparseC-AFM enables efficient extraction of critical material parameters in MoS_2, including film coverage, defect density, and identification of crystalline island boundaries, edges, and cracks. We achieve over 11x reduction in acquisition time compared to manual extraction from a full-resolution C-AFM image. Moreover, we demonstrate that our model-predicted samples exhibit remarkably similar electrical properties to full-resolution data gathered using classic-flow scanning. This work represents a significant step toward translating AI-assisted 2D material characterization from laboratory research to industrial fabrication. Code and model weights are available at github.com/UNITES-Lab/sparse-cafm.

Characterizing materials with electron micrographs poses significant challenges for automated labeling due to the complex nature of nanomaterial structures. To address this, we introduce a fully automated, end-to-end pipeline that leverages recent advances in Generative AI. It is designed for analyzing and understanding the microstructures of semiconductor materials with effectiveness comparable to that of human experts, contributing to the pursuit of Artificial General Intelligence (AGI) in nanomaterial identification. Our approach utilizes Large MultiModal Models (LMMs) such as GPT-4V, alongside text-to-image models like DALLE-3. We integrate a GPT-4 guided Visual Question Answering (VQA) method to analyze nanomaterial images, generate synthetic nanomaterial images via DALLE-3, and employ in-context learning with few-shot prompting in GPT-4V for accurate nanomaterial identification. Our method surpasses traditional techniques by enhancing the precision of nanomaterial identification and optimizing the process for high-throughput screening.

Atomistic modeling of solid-solid battery interfaces is essential for understanding electro-chemo-mechanical coupling, but the complex interfacial chemistry and heterogeneous environments pose major challenges for quantum-accurate, data-efficient modeling. Herein, we propose an approach of fine-tuning with integrated replay and efficiency (FIRE), a general framework for universal machine-learning interatomic potentials by combining efficient configurational sampling with a replay-argumented continual strategy, achieving quantum-level accuracy at moderate cost. Across six solid-solid battery interface systems, FIRE consistently achieves root-mean-square errors in energy below 1 meV/atom and in force near 20 meV/angstrom, marking an order-of-magnitude improvement over existing models while requiring only 10% of the original datasets. In addition, the fine-tuned model successfully reproduces key mechanical and electrochemical properties of the materials, in close agreement with experimental data. The FIRE offers a generalizable and data-efficient approach for developing accurate interatomic potentials across diverse materials, enabling predictive simulations beyond the reach of first-principles methods.

Berry curvature physics and quantum geometric effects have been instrumental in advancing topological condensed matter physics in recent decades. Although Landau level-based flat bands and conventional 3D solids have been pivotal in exploring rich topological phenomena, they are constrained by their limited ability to undergo dynamic tuning. In stark contrast, moiré systems have risen as a versatile platform for engineering bands and manipulating the distribution of Berry curvature in momentum space. These moiré systems not only harbor tunable topological bands, modifiable through a plethora of parameters, but also provide unprecedented access to large length scales and low energy scales. Furthermore, they offer unique opportunities stemming from the symmetry-breaking mechanisms and electron correlations associated with the underlying flat bands that are beyond the reach of conventional crystalline solids. A diverse array of tools, encompassing quantum electron transport in both linear and non-linear response regimes and optical excitation techniques, provide direct avenues for investigating Berry physics. This review navigates the evolving landscape of tunable moiré materials, highlighting recent experimental breakthroughs in the field of topological physics. Additionally, we delineate several challenges and offer insights into promising avenues for future research.

Topological materials provide a platform that utilizes the geometric characteristics of structured materials to control the flow of waves, enabling unidirectional and protected transmission that is immune to defects or impurities. The topologically designed photonic materials can carry quantum states and electromagnetic energy, benefiting nanolasers or quantum photonic systems. This article reviews recent advances in the topological applications of photonic materials for radiative heat transfer, especially in the near field. When the separation distance between media is considerably smaller than the thermal wavelength, the heat transfer exhibits super-Planckian behavior that surpasses Planck's blackbody predictions. Near-field thermal radiation in subwavelength systems supporting surface modes has various applications, including nanoscale thermal management and energy conversion. Photonic materials and structures that support topological surface states show immense potential for enhancing or suppressing near-field thermal radiation. We present various topological effects, such as periodic and quasi-periodic nanoparticle arrays, Dirac and Weyl semimetal-based materials, structures with broken global symmetries, and other topological insulators, on near-field heat transfer. Also, the possibility of realizing near-field thermal radiation in such topological materials for alternative thermal management and heat flux guiding in nano-scale systems is discussed based on the existing technology.

Inverse design of solid-state materials with desired properties represents a formidable challenge in materials science. Although recent generative models have demonstrated potential, their adoption has been hindered by limitations such as inefficiency, architectural constraints and restricted open-source availability. The representation of crystal structures using the SLICES (Simplified Line-Input Crystal-Encoding System) notation as a string of characters enables the use of state-of-the-art natural language processing models, such as Transformers, for crystal design. Drawing inspiration from the success of GPT models in generating coherent text, we trained a generative Transformer on the next-token prediction task to generate solid-state materials with targeted properties. We demonstrate MatterGPT's capability to generate de novo crystal structures with targeted single properties, including both lattice-insensitive (formation energy) and lattice-sensitive (band gap) properties. Furthermore, we extend MatterGPT to simultaneously target multiple properties, addressing the complex challenge of multi-objective inverse design of crystals. Our approach showcases high validity, uniqueness, and novelty in generated structures, as well as the ability to generate materials with properties beyond the training data distribution. This work represents a significant step forward in computational materials discovery, offering a powerful and open tool for designing materials with tailored properties for various applications in energy, electronics, and beyond.

Silicon nitride has emerged as a promising photonic platform for integrated single-photon sources, yet the microscopic origin of the recently observed bright quantum emissions remains unclear. Using hybrid density functional theory, we show that the negatively charged N_SiV_N center (NV^{-}) in the C_{1h} configuration exhibits a linearly polarized zero-phonon line (ZPL) at 2.46 eV, with a radiative lifetime of 9.01 ns and a high Debye-Waller (DW) factor of 33%. We further find that the C_{1h} configuration is prone to a pseudo-Jahn-Teller distortion, yielding two symmetrically equivalent defect structures that emit bright, linearly polarized ZPL at 1.80 eV with a lifetime of 10.17 ns and an increased DW factor of 41%. These nitrogen-vacancy-related defects explain the origins of visible quantum emissions, paving the way for deterministic and monolithically integrated silicon-nitride quantum photonics.

Next-generation nano and quantum devices have increasingly complex 3D structure. As the dimensions of these devices shrink to the nanoscale, their performance is often governed by interface quality or precise chemical or dopant composition. Here we present the first phase-sensitive extreme ultraviolet imaging reflectometer. It combines the excellent phase stability of coherent high-harmonic sources, the unique chemical- and phase-sensitivity of extreme ultraviolet reflectometry, and state-of-the-art ptychography imaging algorithms. This tabletop microscope can non-destructively probe surface topography, layer thicknesses, and interface quality, as well as dopant concentrations and profiles. High-fidelity imaging was achieved by implementing variable-angle ptychographic imaging, by using total variation regularization to mitigate noise and artifacts in the reconstructed image, and by using a high-brightness, high-harmonic source with excellent intensity and wavefront stability. We validate our measurements through multiscale, multimodal imaging to show that this technique has unique advantages compared with other techniques based on electron and scanning-probe microscopies.

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.

Symmetry has long provided the organizing principle for understanding how materials respond to external perturbations. Here we show that what is permitted by symmetry need not be what actually emerges from the underlying system, and this distinction becomes particularly consequential for symmetry-related gapless Dirac fermions such as in altermagnets. A perturbation that shifts the Dirac points drives a Lifshitz reconstruction and generates an intrinsically nonanalytic effective potential, giving rise to undiscovered singular responses. In Dirac altermagnets, this nonanalyticity acquires a magnetic manifestation through C-paired spin-polarized Dirac cones: breaking the pairing symmetry C lifts their degeneracy and converts the associated Lifshitz reconstruction into an itinerant magnetization. As a consequence, piezomagnetism, the induction of a net magnetization by a mechanical strain, becomes nonlinear and nonanalytic, with Mproptosgn(varepsilon)varepsilon^2, whereas the linear response is absent despite being allowed by symmetry. Accordingly, the leading response cannot be inferred from the conventional symmetry-based paradigm of material response built upon the cornerstones of Neumann's principle and analytic Landau expansion. First-principles calculations identify the monolayer Fe_2S as a candidate material realization for such singular magnetic responses. These results suggest quantum singularities as a new degree of freedom for engineering material responses.

We introduce a technique for extracting microstructural geometry from NMR lineshape analysis in porous materials at angstrom-scale resolution with the use of weak magnetic field gradients. Diverging from the generally held view of FID signals undergoing simple exponential decay, we show that a detailed analysis of the line shape can unravel structural geometry on much smaller scales than previously thought. While the original q-space PFG NMR relies on strong magnetic field gradients in order to achieve high spatial resolution, our current approach reaches comparable or higher resolution using much weaker gradients. As a model system, we simulated gas diffusion for xenon confined within carbon nanotubes over a range of temperatures and nanotube diameters in order to unveil manifestations of confinement in the diffusion behavior. We report a multiscale scheme that couples the above MD simulations with the generalized Langevin equation to estimate the transport properties of interest for this problem, such as diffusivity coefficients and NMR lineshapes, using the Green-Kubo correlation function to correctly evaluate time-dependent diffusion. Our results highlight how NMR methodologies can be adapted as effective means towards structural investigation at very small scales when dealing with complicated geometries. This method is expected to find applications in materials science, catalysis, biomedicine and other areas.

High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of PtSe_2. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths gtrsim 4.5,T are found to occur exclusively in plane and emerge at a layer thickness of approx 18,nm, increasing in amplitude and decreasing in frequency for thinner PtSe_2 flakes. Moreover, the quantum transport time, Berry phase, Dingle temperature and cyclotron mass of the charge carriers are ascertained. The emergence of weak antilocalization (WAL) lies in contrast to the presence of magnetic moments from Pt vacancies. An explanation is provided on how WAL and the Kondo effect can be observed within the same material. Detailed information about the charge carriers and transport phenomena in PtSe_2 is obtained, which is relevant for the design of prospective spintronic and orbitronic devices and for the realization of orbital Hall effect-based architectures.

This study systematically investigates the photoconductive properties of low-temperature-grown Beryllium (Be)-doped InGaAs/InAlAs strain-balanced superlattices (SLs) grown by molecular beam epitaxy under stationary growth conditions on semi-insulating InP:Fe substrates. The stationary growth approach enabled precise control over lateral gradients in layer strain, composition, and thickness across a single wafer, while strain-balancing facilitated pseudomorphic growth to explore a wide range of structural parameters, providing a robust platform to study their influence on photoconductive performance. Structural characterization confirmed high crystalline quality and smooth surface morphology in all samples. Time-resolved pump-probe spectroscopy revealed subpicosecond carrier lifetimes, validating the effectiveness of strain balancing and Be doping in tuning ultrafast recombination dynamics. Hall effect measurements supported by 8-band k.p modeling revealed enhanced carrier mobility in strain-balanced SLs compared to lattice-matched structures, primarily due to reduced electron and hole effective masses and stronger quantum confinement. Additionally, optical absorption under 1550 nm excitation showed improved absorption coefficients for the strain-balanced structure, consistent with the reduction in bandgap energy predicted by theoretical modeling, thereby enhancing photon-to-carrier conversion efficiency. Furthermore, transmission electron microscopy provided first-time evidence of significant Be-induced interdiffusion at the strained SL interfaces, an important factor influencing carrier transport and dynamics. These findings position low-temperature-grown Be-doped InGaAs/InAlAs strain-balanced SLs as promising materials for high-performance broadband THz photoconductive detectors operating at telecom-compatible wavelengths.

The hybridization gap in strained-layer InAs/InxGa1-xSb quantum spin Hall insulators (QSHIs) is significantly enhanced compared to binary InAs/GaSb QSHI structures, where the typical indium composition, x, ranges between 0.2 and 0.4. This enhancement prompts a critical question: to what extent can quantum wells (QWs) be strained while still preserving the fundamental QSHI phase? In this study, we demonstrate the controlled molecular beam epitaxial (MBE) growth of highly strained-layer QWs with an indium composition of x = 0.5. These structures possess a substantial compressive strain within the In0.5Ga0.5Sb QW. Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films, indicating coherent lattice structures and the absence of visible dislocations. Transport measurements further reveal that the QSHI phase in InAs/In0.5Ga0.5Sb QWs is robust and protected by time-reversal symmetry. Notably, the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field. This behavior is in agreement with the Z2 topological property predicted by the Bernevig-Hughes-Zhang (BHZ) model, confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.

Through rational chemical design, and thanks to the hybrid nature of metal-organic frameworks (MOFs), it is possible to prepare molecule-based 2D magnetic materials stable at ambient conditions. Here, we illustrate the versatility of this approach by changing both the metallic nodes and the ligands in a family of layered MOFs that allows the tuning of their magnetic properties. Specifically, the reaction of benzimidazole-type ligands with different metal centres (MII = Fe, Co, Mn, Zn) in a solvent-free synthesis produces a family of crystalline materials, denoted as MUV-1(M), which order antiferromagnetically with critical temperatures that depend on M. Furthermore, the incorporation of additional substituents in the ligand results in a novel system, denoted as MUV-8, formed by covalently bound magnetic double-layers interconnected by van der Waals interactions, a topology that is very rare in the field of 2D materials and unprecedented for 2D magnets. These layered materials are robust enough to be mechanically exfoliated down to a few layers with large lateral dimensions. Finally, the robustness and crystallinity of these layered MOFs allow the fabrication of nanomechanical resonators that can be used to detect -- through laser interferometry -- the magnetic order in thin layers of these 2D molecule-based antiferromagnets.

Chemical intercalation provides a powerful route for tuning the electronic and magnetic properties of transition metal dichalcogenides (TMDs), enabling the emergence of magnetic phases and phenomena that are otherwise inaccessible in their pristine forms. Here, we investigate the structural, electronic, and magnetic properties of magnetically intercalated Cr_{1+x}Te_2 through a combination of scanning tunneling microscopy, angle-resolved photoemission spectroscopy, magnetization, electrical transport, and Lorentz transmission electron microscopy measurements. We uncover a rich magnetic phase diagram comprising paramagnetic, in-plane spin-fluctuation, out-of-plane ferromagnetic, and field-induced Néel-type skyrmion phases. In particular, Lorentz transmission electron microscopy directly reveals the formation of Néel-type skyrmion textures slightly below the Curie temperature, with their configurations evolving strongly with temperature and magnetic field. The skyrmions exhibit pronounced thermal hysteresis and coexist with stripe domains, indicative of a complex magnetic energy landscape arising from the competition among disorder-induced local Dzyaloshinskii-Moriya interactions, perpendicular magnetic anisotropy, and dipolar interactions. Our results demonstrate that chemical intercalation can profoundly reshape the magnetic interactions and phase behavior of TMDs, establishing Cr_{1+x}Te_2 as a versatile platform for exploring tunable magnetism, skyrmion physics, and unconventional thermodynamic phenomena in low-dimensional quantum materials.

Advances in graph machine learning (ML) have been driven by applications in chemistry as graphs have remained the most expressive representations of molecules. While early graph ML methods focused primarily on small organic molecules, recently, the scope of graph ML has expanded to include inorganic materials. Modelling the periodicity and symmetry of inorganic crystalline materials poses unique challenges, which existing graph ML methods are unable to address. Moving to inorganic nanomaterials increases complexity as the scale of number of nodes within each graph can be broad (10 to 10^5). The bulk of existing graph ML focuses on characterising molecules and materials by predicting target properties with graphs as input. However, the most exciting applications of graph ML will be in their generative capabilities, which is currently not at par with other domains such as images or text. We invite the graph ML community to address these open challenges by presenting two new chemically-informed large-scale inorganic (CHILI) nanomaterials datasets: A medium-scale dataset (with overall >6M nodes, >49M edges) of mono-metallic oxide nanomaterials generated from 12 selected crystal types (CHILI-3K) and a large-scale dataset (with overall >183M nodes, >1.2B edges) of nanomaterials generated from experimentally determined crystal structures (CHILI-100K). We define 11 property prediction tasks and 6 structure prediction tasks, which are of special interest for nanomaterial research. We benchmark the performance of a wide array of baseline methods and use these benchmarking results to highlight areas which need future work. To the best of our knowledge, CHILI-3K and CHILI-100K are the first open-source nanomaterial datasets of this scale -- both on the individual graph level and of the dataset as a whole -- and the only nanomaterials datasets with high structural and elemental diversity.

The key challenge in advancing multivalent-ion batteries lies in finding suitable intercalation hosts. Open-tunnel oxides, featuring one-dimensional channels or nanopores, show promise for enabling effective ion transport. However, the vast range of compositional possibilities renders traditional experimental and quantum-based methods impractical for large-scale studies. This work presents a generative AI framework that uses the Crystal Diffusion Variational Autoencoder (CDVAE) and a fine-tuned Large Language Model (LLM) to expedite the discovery of stable open-tunneled oxide materials for multivalent-ion batteries. By combining machine learning with data mining techniques, five promising transition metal oxide (TMO) structures are generated. These structures, known for forming open-tunnel oxide frameworks, are structurally validated through Density Functional Theory (DFT). The results show that the generated structures have lower formation energies compared to similar compositions in the Materials Project (MP) database, indicating improved thermodynamic stability. Additionally, the graph-based M3GNet model is employed to relax further generated structures, providing a more computationally efficient alternative to DFT. Machine learning-based predictions of formation energy, band gap, and energy above the hull refine the selection process, leading to the identification of materials with significant potential for real-world battery applications. This research demonstrates the power of generative AI in rapidly exploring the vast chemical space of TMOs, offering a new approach to discovering stable open-tunnel oxides for multivalent-ion batteries. The results highlight the potential of this approach to contribute to more sustainable energy storage technologies, addressing the growing concerns surrounding the scarcity of lithium.

We study interlayer exciton superfluidity versus layer separation in two-dimensional electron-hole bilayers at zero magnetic field and quantum Hall bilayers at total filling ν_T=1. Unscreened Hartree-Fock theory predicts coherence at every finite separation, with an energy scale decaying inversely with separation at large distances. We examine how screening, correlations, and spatial instabilities modify this prediction. At zero field, we solve the linearized gap equation with the full momentum and frequency dependence of the interaction screened within the random-phase approximation, without an imposed cutoff. The apparent plasmon enhancement of pairing in the ladder approximation is largely cancelled by the second-order crossed-rung correction. Static screening determines the leading pairing exponent in the controlled high-density limit at fixed separation. At large separation, the pairing scale falls exponentially with squared separation while the instability persists. Extending this result to fixed density assumes Fermi-liquid layers and higher-order dynamical corrections subleading to the static pairing interaction. At high field, we obtain an analytic uniform Hartree-Fock saddle point in the lowest Landau level, coherent at every finite separation. Within Hartree-Fock theory, its finite-wave-vector collective-mode instability favors an excitonic supersolid, distinguishing loss of spatial uniformity from loss of coherence. We conjecture that the quantum Hall bilayer evolves continuously toward weak pairing of composite fermions, with a scale far below the mean-field prediction at large separation. This suppression could produce an apparent critical separation at finite temperature without a ground-state quantum phase transition. The comparison separates the existence, energy scale, and spatial stability of interlayer coherence.

Electronic band structure (BS) and crystal structure are the two complementary identifiers of solid state materials. While convenient instruments and reconstruction algorithms have made large, empirical, crystal structure databases possible, extracting quasiparticle dispersion (closely related to BS) from photoemission band mapping data is currently limited by the available computational methods. To cope with the growing size and scale of photoemission data, we develop a pipeline including probabilistic machine learning and the associated data processing, optimization and evaluation methods for band structure reconstruction, leveraging theoretical calculations. The pipeline reconstructs all 14 valence bands of a semiconductor and shows excellent performance on benchmarks and other materials datasets. The reconstruction uncovers previously inaccessible momentum-space structural information on both global and local scales, while realizing a path towards integration with materials science databases. Our approach illustrates the potential of combining machine learning and domain knowledge for scalable feature extraction in multidimensional data.

One of the main goals and challenges of materials discovery is to find the best candidates for each interest property or application. Machine learning rises in this context to efficiently optimize this search, exploring the immense materials space, consisting of simultaneously the atomic, compositional, and structural spaces. Topological insulators, presenting symmetry-protected metallic edge states, are a promising class of materials for different applications. However, further, development is limited by the scarcity of viable candidates. Here we present and discuss machine learning-accelerated strategies for searching the materials space for two-dimensional topological materials. We show the importance of detailed investigations of each machine learning component, leading to different results. Using recently created databases containing thousands of ab initio calculations of 2D materials, we train machine learning models capable of determining the electronic topology of materials, with an accuracy of over 90%. We can then generate and screen thousands of novel materials, efficiently predicting their topological character without the need for a priori structural knowledge. We discover 56 non-trivial materials, of which 17 novel insulating candidates for further investigation, for which we corroborate their topological properties with density functional theory calculations. This strategy is 10times more efficient than the trial-and-error approach while few orders of magnitude faster and is a proof of concept for guiding improved materials discovery search strategies.

Earlier, in the CINT program at Los Alamos National Laboratory, we focused ultrafast mode-locked lasers on the tip-sample junction of a scanning tunneling microscope to generate currents at hundreds of harmonics of the laser pulse repetition frequency. Each harmonic has a signal-to-noise ratio of 20 dB with a 10-dB linewidth of only 3 Hz. Now we model closed quantum nanocircuits with rectangular, triangular, or delta-function barrier, shunted by a beryllium filament for quasi-coherent electron transport over mean-free paths as great as 68 nm. The time-independent Schrödinger equation is solved with the boundary conditions that the wavefunction and its derivative are continuous at both connections. These four boundary conditions are used to form a four-by-four complex matrix equation with only zeros in the right-hand column vector which is required to have a non-trivial solution with each of the closed nanocircuits. Each model has four parameters: (1) the barrier length, (2) the height and shape of the barrier, (3) the length of the pre-barrier, and (4) the electron energy. Any three of these may be specified and then the fourth is varied to bring the determinant to zero to find the solutions on lines or surfaces in the space defined by the four parameters. First, we use a simplistic model having a rectangular barrier. The second model has a triangular barrier as a first approximation to field emission, and we are considering applying this approach for a self-contained nanoscale extension of our earlier effort to generate the harmonics at Los Alamos. The third model has a delta-function barrier, and the fourth model is an extension of the first one where the width of the rectangular barrier is varied inversely with its height.

The design of functional materials with desired properties is essential in driving technological advances in areas like energy storage, catalysis, and carbon capture. Generative models provide a new paradigm for materials design by directly generating entirely novel materials given desired property constraints. Despite recent progress, current generative models have low success rate in proposing stable crystals, or can only satisfy a very limited set of property constraints. Here, we present MatterGen, a model that generates stable, diverse inorganic materials across the periodic table and can further be fine-tuned to steer the generation towards a broad range of property constraints. To enable this, we introduce a new diffusion-based generative process that produces crystalline structures by gradually refining atom types, coordinates, and the periodic lattice. We further introduce adapter modules to enable fine-tuning towards any given property constraints with a labeled dataset. Compared to prior generative models, structures produced by MatterGen are more than twice as likely to be novel and stable, and more than 15 times closer to the local energy minimum. After fine-tuning, MatterGen successfully generates stable, novel materials with desired chemistry, symmetry, as well as mechanical, electronic and magnetic properties. Finally, we demonstrate multi-property materials design capabilities by proposing structures that have both high magnetic density and a chemical composition with low supply-chain risk. We believe that the quality of generated materials and the breadth of MatterGen's capabilities represent a major advancement towards creating a universal generative model for materials design.

Phenomena responsible for emerging technologies originate from novel molecular states at buried interfaces. Yet quantitatively resolving these features is out of reach in most cases. Resonant scattering has demonstrated sensitivity to these local states but is limited due to a lack of accurate interpretive models. We leverage a machine learning (ML)-optimized optical model to analyze polarized resonant soft X-ray scattering (RSoXS) from molecular thin films. This new analysis establishes the direct and quantitative interpretation of molecular orientation, chemical identity and packing states as a function of depth with sub-monolayer resolution - reaching beyond the diffraction limit via locking energy and polarization through the optical model. From our analysis, we discover a gradient evolution of molecular orientation and packing emerging from the interface, indicative of competing surface versus bulk growth dynamics and contradicting hypotheses of substrate patterning. This nondestructive insight into buried interfacial formation and final state opens possibilities in controlling interfacial states and phenomena in next-generation technologies.

The structural stability and phonon properties of SnSe/SnS superlattices at finite temperatures have been studied using machine learning force field molecular dynamics and the anharmonic phonon approach. The vertical SnSe/SnS superlattice undergoes a phase transition from the Pnma phase to a novel P4/nmm phase at finite temperatures, which is different from the high-temperature Cmcm phase of the SnSe and SnS systems. The stability of P4/nmm phase is determined by molecular dynamics trajectories and anharmonic phonon dispersion relations. The imaginary modes of TO modes at the q=M(1/2,1/2,0) point of the P4/nmm phase in harmonic approximation become rigid at elevated temperatures. An analysis of phonon power spectra upon temperature also confirms the dynamic stabilization. The P4/nmm phase has higher symmetry than the Pnma phase, and the phase transition between them is accompanied by competition between the Jahn-Teller effect and phonon anharmonicity. Unlike the anisotropic distribution of Sn-Se/S bonds in the Pnma phase, the P4/nmm phase forms chemical bonds with similar bond lengths both in-plane and interlayer, and their resonance effect can significantly enhance phonon scattering. The calculated phonon density of states and lifetime is strongly temperature dependent, demonstrating the heavy anharmonicity in the SnSe/SnS system. The P4/nmm phase has an extremely low lattice thermal conductivity, close to the experimental values of SnSe and SnS. Moreover, with the reduction of band gap and the enhancement of band degeneracy near the Fermi level, the P4/nmm phase exhibits superior electronic transport properties and significantly enhanced response to infrared and visible light. This makes it show great potential in thermoelectric and photovoltaic applications.

High-performance DUV spectroscopy drives advancements in biomedical research, clinical diagnosis, and material science. Existing DUV resonant nanostructures face instability and photoluminescent noise challenges. We propose robust Si metasurfaces leveraging polaritonic resonances, a unique property driven by interband transitions, for enhanced nanophotonic sensing. Our polaritonic Kerker-type void metasurface enables double-resonance Raman scattering to analyze 2D semiconductors, improves biomolecule autofluorescence, and offers superior stability. This scalable platform unlocks versatile applications in interdisciplinary DUV spectroscopy and emerging nanomaterials research.

Machine-learned exchange--correlation (XC) functionals offer a route to improve Kohn--Sham density-functional theory without incurring the cost of explicitly correlated electronic-structure methods. Their use in production simulation codes, however, requires a well-defined mapping between the learned model and the host-code density representation. We formulate and implement a Skala-1.1 interface in CP2K through the external GauXC library. CP2K supplies the geometry, Gaussian basis, spin-resolved atomic-orbital density matrix, and communicator, while GauXC evaluates the XC energy, atomic-orbital potential matrix, and available nuclear derivatives. The interface accepts both all-electron and valence-only density matrices. The latter may arise from separable dual-space pseudopotentials or molecular effective-core potentials. Implementation errors are isolated from functional differences by comparing the Perdew--Burke--Ernzerhof (PBE) functional evaluated through GauXC with native CP2K PBE. The resulting interface gives consistent energies, forces validated against finite-difference total-energy checks, and force-based molecular-virial diagnostics for representative molecular cases. The dietGMTKN55 benchmark suite is evaluated with an all-electron Gaussian augmented plane-wave treatment for elements up to bromine and def2 effective-core potentials for the heavier elements. The resulting aggregate mean absolute deviation of 1.255 kcal/mol is within 0.020 kcal/mol of the corresponding Skala reference value of 1.235 kcal/mol. This work establishes a validated molecular implementation of Skala in CP2K through GauXC.

Energy Dispersive X-ray (EDX) tomography in Scanning Transmission Electron Microscopy (STEM) enables 3D compositional and elemental mapping at the nanoscale, but its use is limited by restricted tilt ranges and low-dose conditions required to avoid beam damage. Limited-angle acquisition introduces missing-wedge artefacts such as elongation and anisotropic resolution, while noisy low-dose data further degrade reconstruction quality and quantitative reliability. Here, we introduce an unsupervised deep learning framework based on Deep Image Prior with total variation regularization (DIP-TV) for limited-angle STEM-EDX tomography. We extend it to a multi-channel formulation (DIPm-TV) that jointly reconstructs multiple elemental maps by exploiting spatial correlations. Using a synthetic 3-channel phantom, we show that the method compensates for severe missing-wedge artefacts corresponding to approximately 100^circ of missing angular range under moderate noise, outperforming simultaneous iterative reconstruction technique and compressed sensing approaches. We apply the method to 3D chemical analysis of Ge-Sb-Te (GST) memory devices in virgin (as-fabricated) and SET (crystalline) operational states. Samples were prepared as cross-sectional focused ion beam lamellae and acquired under a limited-angle tilt range from -40^circ to +40^circ with 5^circ steps and a dose of 2.0times10^5 e^-/Ang^2. The multi-channel approach enables voxel-by-voxel elemental reconstruction using only EDX signals without external structural priors such as high-angle annular dark-field imaging. The reconstructed volumes show near-isotropic spatial resolution and reveal compositional heterogeneities associated with device operation. This approach enables 3D chemical characterization in experimentally accessible sample geometries where conventional methods fail due to severe angular limitations.

We investigate properties of holographic strange metals in p+2-dimensions, generalizing the analysis performed in arXiv:0912.1061. The bulk spacetime is p+2-dimensional Lifshitz black hole, while the role of charge carriers is played by probe D-branes. We mainly focus on massless charge carriers, where most of the results can be obtained analytically. We obtain exact results for the free energy and calculate the entropy density, the heat capacity as well as the speed of sound at low temperature. We obtain the DC conductivity and DC Hall conductivity and find that the DC conductivity takes a universal form in the large density limit, while the Hall conductivity is also universal in all dimensions. We also study the resistivity in different limits and clarify the condition for the linear dependence on the temperature, which is a key feature of strange metals. We show that our results for the DC conductivity are consistent with those obtained via Kubo formula and we obtain the charge diffusion constant analytically. The corresponding properties of massive charge carriers are also discussed in brief.

We present the first complete machine learning method for accelerating plane-wave density functional theory (DFT) in materials under the projector augmented wave (PAW) formalism. We formalize seven criteria that a Complete Neural Electronic Initializer must satisfy for practical end-to-end PAW DFT acceleration. Applying these criteria to prior work reveals two missing structure-dependent components, augmentation occupancies and spin initialization, that prevent existing methods from providing complete reference-free initialization. Controlled ablations show that omitting these components can eliminate or reverse the acceleration obtained via models that only predict the smooth valence density. We satisfy these missing requirements by introducing AugNet, the first general equivariant model for PAW augmentation occupancies, and the first general spin density model for materials, which predicts the smooth spin-difference density and spin-difference PAW augmentation occupancies using predicted magnetic moments to constrain the global magnetic state. Combined with existing valence density models, these components satisfy all seven criteria and form a fully reference-free electronic initializer for materials DFT, requiring no electronic quantities from a converged target calculation. Our method reduces end-to-end DFT wall time by up to ~25% on unseen structures while preserving converged energies.

Freestanding thin films, a class of low-dimensional materials capable of maintaining structural integrity without substrates, have emerged as a forefront research focus. Their unique advantages-circumventing substrate clamping, liberating intrinsic material properties, and enabling cross-platform heterogeneous integration-underpin this prominence. This review systematically summarizes core fabrication techniques, including physical delamination (e.g., laser lift-off, mechanical exfoliation) and chemical etching, alongside associated transfer strategies. It further explores the induced strain modulation mechanisms, extreme mechanical properties and interface decoupling effects enabled by these films. Representative case studies demonstrate breakthrough applications in flexible/ultrathin electronics, ultrahigh-sensitivity sensors and the exploration of novel quantum states. Critical challenges regarding scalable fabrication, precise interface control, and long-term stability are analyzed, concluding with prospects for emerging applications in bio-inspired intelligent devices, quantum precision sensing, and brain-inspired neural networks.

Auger electron spectroscopy, a way of characterizing electronic structure through core-level decay processes, is widely used in materials characterization; however direct calculation from molecular geometry requires accurate treatment of many excited states, posing a challenge for classical methods. We present a hybrid quantum-classical workflow for calculating Auger spectra that combines the generative quantum eigensolver (GQE) for ground-state preparation, the quantum self-consistent equation-of-motion method for excited-state calculations, and the one-centre approximation for Auger transition rates. GQE uses a GPT-2 model to generate quantum circuits for ground-state optimization, allowing our workflow to benefit from HPC parallelization and GPU-acceleration for favourable scaling with system size. We demonstrate the validity of our workflow by calculating the Auger spectrum of water with the STO-3G basis set and demonstrating qualitative and quantitative agreement with spectra obtained using completely classical full configuration interaction calculations, from the computational literature, and from the experimental literature. We also find that for water, substituting the variational quantum eigensolver (VQE) for GQE results in near-identical spectra, but that the ground state estimator generated by GQE contains about half the total gate count as that generated by VQE.

A major challenge in materials science is the determination of the structure of nanometer sized objects. Here we present a novel approach that uses a generative machine learning model based on diffusion processes that is trained on 45,229 known structures. The model factors both the measured diffraction pattern as well as relevant statistical priors on the unit cell of atomic cluster structures. Conditioned only on the chemical formula and the information-scarce finite-size broadened powder diffraction pattern, we find that our model, PXRDnet, can successfully solve simulated nanocrystals as small as 10 angstroms across 200 materials of varying symmetry and complexity, including structures from all seven crystal systems. We show that our model can successfully and verifiably determine structural candidates four out of five times, with average error among these candidates being only 7% (as measured by post-Rietveld refinement R-factor). Furthermore, PXRDnet is capable of solving structures from noisy diffraction patterns gathered in real-world experiments. We suggest that data driven approaches, bootstrapped from theoretical simulation, will ultimately provide a path towards determining the structure of previously unsolved nano-materials.

We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimensional (2D) transistors from electrical measurements, enabling automated parameter extraction and technology computer-aided design (TCAD) fitting. To facilitate this task, we implement a simple data augmentation and pre-training approach by training a secondary neural network to approximate a physics-based device simulator. This method enables high-quality fits after training the neural network on electrical data generated from physics-based simulations of ~500 devices, a factor >40times fewer than other recent efforts. Consequently, fitting can be achieved by training on physically rigorous TCAD models, including complex geometry, self-consistent transport, and electrostatic effects, and is not limited to computationally inexpensive compact models. We apply our approach to reverse-engineer key parameters from experimental monolayer WS_2 transistors, achieving a median coefficient of determination (R^2) = 0.99 when fitting measured electrical data. We also demonstrate that this approach generalizes and scales well by reverse-engineering electrical data on high-electron-mobility transistors while fitting 35 parameters simultaneously. To facilitate future research on deep learning approaches for inverse transistor design, we have published our code and sample data sets online.

In the search for novel intermetallic ternary alloys, much of the effort goes into performing a large number of ab-initio calculations covering a wide range of compositions and structures. These are essential to build a reliable convex hull diagram. While density functional theory (DFT) provides accurate predictions for many systems, its computational overheads set a throughput limit on the number of hypothetical phases that can be probed. Here, we demonstrate how an ensemble of machine-learning spectral neighbor-analysis potentials (SNAPs) can be integrated into a workflow for the construction of accurate ternary convex hull diagrams, highlighting regions fertile for materials discovery. Our workflow relies on using available binary-alloy data both to train the SNAP models and to create prototypes for ternary phases. From the prototype structures, all unique ternary decorations are created and used to form a pool of candidate compounds. The SNAPs are then used to pre-relax the structures and screen the most favourable prototypes, before using DFT to build the final phase diagram. As constructed, the proposed workflow relies on no extra first-principles data to train the machine-learning surrogate model and yields a DFT-level accurate convex hull. We demonstrate its efficacy by investigating the Cu-Ag-Au and Mo-Ta-W ternary systems.

Continuous solid electrolyte interface (SEI) formation remains the limiting factor of the lifetime of silicon nanoparticles (SiNPs) based negative electrodes. Methods that could provide clear diagnosis of the electrode degradation are of utmost necessity to streamline further developments. We demonstrate that electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) can be used to quickly map SEI components and quantify LixSi alloys from single experiments, with resolutions down to 5 nm. Exploiting the low-loss part of the EEL spectrum allowed us to circumvent the degradation phenomena that have so far crippled the application of this technique on such beam-sensitive compounds. Our results provide unprecedented insight into silicon aging mechanisms in full cell configuration. We observe the morphology of the SEI to be extremely heterogeneous at the particle scale but with clear chemical evolutions with extended cycling coming from both SEI accumulation and a transition from lithium-rich carbonate-like compounds to lithium-poor ones. Thanks to the retrieval of several results from a single dataset, we were able to correlate local discrepancies in lithiation to the initial crystallinity of silicon as well as to the local SEI chemistry and morphology. This study emphasizes how initial heterogeneities in the percolating electronic network and the porosity affect SiNPs aggregates along cycling. These findings pinpoint the crucial role of an optimized formulation in silicon-based thick electrodes.

The ability to generate 3D multiphase microstructures on-demand with targeted attributes can greatly accelerate the design of advanced materials. Here, we present a conditional latent diffusion model (LDM) framework that rapidly synthesizes high-fidelity 3D multiphase microstructures tailored to user specifications. Using this approach, we generate diverse two-phase and three-phase microstructures at high resolution (volumes of 128 times 128 times 64 voxels, representing >10^6 voxels each) within seconds, overcoming the scalability and time limitations of traditional simulation-based methods. Key design features, such as desired volume fractions and tortuosities, are incorporated as controllable inputs to guide the generative process, ensuring that the output structures meet prescribed statistical and topological targets. Moreover, the framework predicts corresponding manufacturing (processing) parameters for each generated microstructure, helping to bridge the gap between digital microstructure design and experimental fabrication. While demonstrated on organic photovoltaic (OPV) active-layer morphologies, the flexible architecture of our approach makes it readily adaptable to other material systems and microstructure datasets. By combining computational efficiency, adaptability, and experimental relevance, this framework addresses major limitations of existing methods and offers a powerful tool for accelerated materials discovery.

Latent heat thermal energy storage (LHTES) systems are compelling candidates for energy storage, primarily owing to their high storage density. Improving their performance is crucial for developing the next-generation efficient and cost effective devices. Topology optimization (TO) has emerged as a powerful computational tool to design LHTES systems by optimally distributing a high-conductivity material (HCM) and a phase change material (PCM). However, conventional TO typically limits to optimizing the geometry for a fixed, pre-selected materials. This approach does not leverage the large and expanding databases of novel materials. Consequently, the co-design of material and geometry for LHTES remains a challenge and unexplored. To address this limitation, we present an automated design framework for the concurrent optimization of material choice and topology. A key challenge is the discrete nature of material selection, which is incompatible with the gradient-based methods used for TO. We overcome this by using a data-driven variational autoencoder (VAE) to project discrete material databases for both the HCM and PCM onto continuous and differentiable latent spaces. These continuous material representations are integrated into an end-to-end differentiable, transient nonlinear finite-element solver that accounts for phase change. We demonstrate this framework on a problem aimed at maximizing the discharged energy within a specified time, subject to cost constraints. The effectiveness of the proposed method is validated through several illustrative examples.

Tunneling spectroscopy is widely used to examine the subgap spectra in semiconductor-superconductor nanostructures when searching for Majorana zero modes (MZMs). Typically, semiconductor sections controlled by local gates at the ends of hybrids serve as tunnel barriers. Besides detecting states only at the hybrid ends, such gate-defined tunnel probes can cause the formation of non-topological subgap states that mimic MZMs. Here, we develop an alternative type of tunnel probes to overcome these limitations. After the growth of an InSb-Al hybrid nanowire, a precisely controlled in-situ oxidation of the Al shell is performed to yield a nm-thick Al oxide layer. In such thin isolating layer, tunnel probes can be arbitrarily defined at any position along the hybrid nanowire by shadow-wall angle-deposition of metallic leads. This allows us to make multiple tunnel probes along single nanowire hybrids and to successfully identify Andreev bound states (ABSs) of various spatial extension residing along the hybrids.

Chemical potential of species in solution is essential for understanding various chemical processes at interfaces. Molecular dynamics (MD) simulations, constrained by fixed compositions, cannot satisfy a constant chemical potential condition as solute species can migrate to the interface and deplete the bulk due to solute-interface interactions. In this study, we introduce a simple and computationally efficient approach named iterative constant chemical potential molecular dynamics (iCuMD) simulation, which helps simulate targeted molar concentrations of species in solution. iCuMD overcomes the limitations of conventional MD by adjusting the number of species in the solution to reach a target concentration (chemical potential). We demonstrate our approach using solid-liquid and liquid-air interfacial systems as case studies. Specifically, we perform classical force field-based MD simulations of NaCl(aq)-air and NaCl(aq)-graphite interfaces and machine learning interatomic potential (MLIP)-based MD simulations of the Na2SO4(aq)-graphene interface. Our results show that the iCuMD approach efficiently achieves the desired bulk ion concentration within two iterations and can also be integrated with MLIP-driven simulations which enable constant potential simulations with DFT-level accuracy. We show that iCuMD offers a robust and simple computational framework for constant chemical potential simulations as its only requirement is to be able to converge interfacial simulations with a measurable bulk region.

The Casimir effect and superconductivity are foundational quantum phenomena whose interaction remains an open question in physics. How Casimir forces behave across a superconducting transition remains unresolved, owing to the experimental difficulty of achieving alignment, cryogenic environments, and isolating small changes from competing effects. This question carries implications for electron physics, quantum gravity, and high-temperature superconductivity. Here we demonstrate an on-chip superconducting platform that overcomes these challenges, achieving one of the most parallel Casimir configurations to date. Our microchip-based cavities achieve unprecedented area-to-separation ratio between plates, exceeding previous Casimir experiments by orders of magnitude and generating the strongest Casimir forces yet between compliant surfaces. Scanning tunneling microscopy (STM) is used for the first time to directly detect the resonant motion of a suspended membrane, with subatomic precision in both lateral positioning and displacement. Such precision measurements across a superconducting transition allow for the suppression of all van der Waals, electrostatic, and thermal effects. Preliminary measurements suggest superconductivity-dependent shifts in the Casimir force, motivating further investigation and comparison with theories. By uniting extreme parallelism, nanomechanics, and STM readout, our platform opens a new experimental frontier at the intersection of Casimir physics and superconductivity.

Atomic layer deposition (ALD) is widely studied for numerous applications and is commercially employed in the semiconductor industry, where planar substrates are the norm. However, the inherent ALD feature of coating virtually any surface geometry with atomistic thickness control is equally attractive for coating particulate materials (supports). In this review, we provide a comprehensive overview of the developments in this decades-old field of ALD on particulate materials, drawing on a bottom-up and quantitative analysis of 799 articles from this field. The obtained dataset is the basis for abstractions regarding reactor types (specifically for particles), coating materials, reactants, supports and processing conditions. Furthermore, the dataset enables direct access to specific processing conditions (for a given material, surface functionality, application etc.) and increases accessibility of the respective literature. We also review fundamental concepts of ALD on particles, and discuss the most common applications, i.e., catalysis (thermo-, electro-, photo-), batteries, luminescent phosphors and healthcare. Finally, we identify historical trends, and provide an outlook on prospective developments.

In diffraction-based crystal structure analysis, thermal ellipsoids, quantified via Anisotropic Displacement Parameters (ADPs), are critical yet challenging to determine. ADPs capture atomic vibrations, reflecting thermal and structural properties, but traditional computation is often expensive. This paper introduces CartNet, a novel graph neural network (GNN) for efficiently predicting crystal properties by encoding atomic geometry into Cartesian coordinates alongside the crystal temperature. CartNet integrates a neighbour equalization technique to emphasize covalent and contact interactions, and a Cholesky-based head to ensure valid ADP predictions. We also propose a rotational SO(3) data augmentation strategy during training to handle unseen orientations. An ADP dataset with over 200,000 experimental crystal structures from the Cambridge Structural Database (CSD) was curated to validate the approach. CartNet significantly reduces computational costs and outperforms existing methods in ADP prediction by 10.87%, while delivering a 34.77% improvement over theoretical approaches. We further evaluated CartNet on other datasets covering formation energy, band gap, total energy, energy above the convex hull, bulk moduli, and shear moduli, achieving 7.71% better results on the Jarvis Dataset and 13.16% on the Materials Project Dataset. These gains establish CartNet as a state-of-the-art solution for diverse crystal property predictions. Project website and online demo: https://www.ee.ub.edu/cartnet

Vacancies are prevalent and versatile in solid-state physics and materials science. The role of vacancies in strongly correlated materials, however, remains uncultivated until now. Here, we report the discovery of an unprecedented vacancy state forming an extended buckled-honeycomb-vacancy (BHV) ordering in Ir_{16}Sb_{18}. Superconductivity emerges by suppressing the BHV ordering through squeezing of extra Ir atoms into the vacancies or isovalent Rh substitution. The phase diagram on vacancy ordering reveals the superconductivity competes with the BHV ordering. Further theoretical calculations suggest that this ordering originates from a synergistic effect of the vacancy formation energy and Fermi surface nesting with a wave vector of (1/3, 1/3, 0). The buckled structure breaks the crystal inversion symmetry and can mostly suppress the density of states near the Fermi level. The peculiarities of BHV ordering highlight the importance of "correlated vacancies" and may serve as a paradigm for exploring other non-trivial excitations and quantum criticality.

Quantum materials hosting Weyl fermions have opened a new era of research in condensed matter physics. First proposed in 1929 in particle physics, Weyl fermions have yet to be observed as elementary particles. In 2015, Weyl fermions were detected as collective electronic excitations in the strong spin-orbit coupled material tantalum arsenide, TaAs. This discovery was followed by a flurry of experimental and theoretical explorations of Weyl phenomena in materials. Weyl materials naturally lend themselves to the exploration of the topological index associated with Weyl fermions and their divergent Berry curvature field, as well as the topological bulk-boundary correspondence giving rise to protected conducting surface states. Here, we review the broader class of Weyl topological phenomena in materials, starting with the observation of emergent Weyl fermions in the bulk and of Fermi arc states on the surface of the TaAs family of crystals by photoemission spectroscopy. We then discuss some of the exotic optical and magnetic responses observed in these materials, as well as the progress in developing some of the related chiral materials. We discuss the conceptual development of high-fold chiral fermions, which generalize Weyl fermions, and we review the observation of high-fold chiral fermion phases by taking the rhodium silicide, RhSi, family of crystals as a prime example. Lastly, we discuss recent advances in Weyl-line phases in magnetic topological materials. With this Review, we aim to provide an introduction to the basic concepts underlying Weyl physics in condensed matter, and to representative materials and their electronic structures and topology as revealed by spectroscopic studies. We hope this work serves as a guide for future theoretical and experimental explorations of chiral fermions and related topological quantum systems with potentially enhanced functionalities.

The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, t_c. Here, we describe a method to extract the t_c between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract {t}_{{c}}=5.5pm 1.8;{GHz} and {t}_{{c}}=2.2pm 1.3;{GHz} between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of t_c for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.

Understanding electron irradiation effects is vital not only for reliable transmission electron microscopy characterization, but increasingly also for the controlled manipulation of two-dimensional materials. The displacement cross sections of monolayer hBN are measured using aberration-corrected scanning transmission electron microscopy in near ultra-high vacuum at primary beam energies between 50 and 90 keV. Damage rates below 80 keV are up to three orders of magnitude lower than previously measured at edges under poorer residual vacuum conditions where chemical etching appears to have been dominant. Notably, is possible to create single vacancies in hBN using electron irradiation, with boron almost twice as likely as nitrogen to be ejected below 80 keV. Moreover, any damage at such low energies cannot be explained by elastic knock-on, even when accounting for vibrations of the atoms. A theoretical description is developed to account for lowering of the displacement threshold due to valence ionization resulting from inelastic scattering of probe electrons, modelled using charge-constrained density functional theory molecular dynamics. Although significant reductions are found depending on the constrained charge, quantitative predictions for realistic ionization states are currently not possible. Nonetheless, there is potential for defect-engineering of hBN at the level of single vacancies using electron irradiation.

Variational quantum eigensolvers (VQEs) are among the most promising quantum algorithms for solving electronic structure problems in quantum chemistry, particularly during the Noisy Intermediate-Scale Quantum (NISQ) era. In this study, we investigate the capabilities and limitations of VQE algorithms implemented on current quantum hardware for determining molecular ground-state energies, focusing on the adaptive derivative-assembled pseudo-Trotter ansatz VQE (ADAPT-VQE). To address the significant computational challenges posed by molecular Hamiltonians, we explore various strategies to simplify the Hamiltonian, optimize the ansatz, and improve classical parameter optimization through modifications of the COBYLA optimizer. These enhancements are integrated into a tailored quantum computing implementation designed to minimize the circuit depth and computational cost. Using benzene as a benchmark system, we demonstrate the application of these optimizations on an IBM quantum computer. Despite these improvements, our results highlight the limitations imposed by current quantum hardware, particularly the impact of quantum noise on state preparation and energy measurement. The noise levels in today's devices prevent meaningful evaluations of molecular Hamiltonians with sufficient accuracy to produce reliable quantum chemical insights. Finally, we extrapolate the requirements for future quantum hardware to enable practical and scalable quantum chemistry calculations using VQE algorithms. This work provides a roadmap for advancing quantum algorithms and hardware toward achieving quantum advantage in molecular modeling.

We perform a high-throughput computational search for novel phonon-mediated superconductors, starting from the Materials Cloud 3-dimensional structure database of experimentally known inorganic stoichiometric compounds. We first compute the Allen-Dynes critical temperature (T_c) for 4533 non-magnetic metals using a direct and progressively finer sampling of the electron-phonon couplings. For the candidates with the largest T_c, we use automated Wannierizations and electron-phonon interpolations to obtain a high-quality dataset for the most promising 250 dynamically stable structures, for which we calculate spectral functions, superconducting bandgaps, and isotropic Migdal-Eliashberg critical temperatures. For 140 of these, we also provide anisotropic Migdal-Eliashberg superconducting gaps and critical temperatures. The approach is remarkably successful in finding known superconductors, and we find 24 unknown ones with a predicted anisotropic T_{rm c} above 10~K. Among them, we identify a possible double gap superconductor (p-doped BaB_2), a non-magnetic half-Heusler ZrRuSb, and the perovskite TaRu_3C, all exhibiting significant T_{rm c}. Finally, we introduce a sensitivity analysis to estimate the robustness of the predictions.

Quantum many-body methods provide a systematic route to computing electronic properties of molecules and materials, but high computational costs restrict their use in large-scale applications. Due to the complexity in many-electron wavefunctions, machine learning models capable of capturing fundamental many-body physics remain limited. Here, we present a deep learning framework targeting the many-body Green's function, which unifies predictions of electronic properties in ground and excited states, while offering physical insights into many-electron correlation effects. By learning the GW or coupled-cluster self-energy from mean-field features, our graph neural network achieves competitive performance in predicting one- and two-particle excitations and quantities derivable from one-particle density matrix. We demonstrate its high data efficiency and good transferability across chemical species, system sizes, molecular conformations, and correlation strengths in bond breaking, through multiple molecular and nanomaterial benchmarks. This work opens up opportunities for utilizing machine learning to solve many-electron problems.

The mobility edge (ME) is a critical energy delineates the boundary between extended and localized states within the energy spectrum, and it plays a crucial role in understanding the metal-insulator transition in disordered or quasiperiodic systems. While there have been extensive studies on MEs in one-dimensional non-Hermitian (NH) quasiperiodic lattices recently, the investigation of exact NH MEs in two-dimensional (2D) cases remains rare. In the present study, we introduce a 2D dissipative Lieb lattice (DLL) model with imaginary quasiperiodic potentials applied solely to the vertices of the Lieb lattice. By mapping this DLL model to the 2D NH Aubry-Andr{é}-Harper (AAH) model, we analytically derive the exact ME and find it associated with the absolute eigenenergies. We find that the eigenvalues of extended states are purely imaginary when the quasiperiodic potential is strong enough. Additionally, we demonstrate that the introduction of imaginary quasiperiodic potentials does not disrupt the flat bands inherent in the system. Finally, we propose a theoretical framework for realizing our model using the Lindblad master equation. Our results pave the way for further investigation of exact NH MEs and flat bands in 2D dissipative quasiperiodic systems.

The exploration of thermoelectric materials is challenging considering the large materials space, combined with added exponential degrees of freedom coming from doping and the diversity of synthetic pathways. Here we seek to incorporate historical data and update and refine it using experimental feedback by employing error-correction learning (ECL). We thus learn from prior datasets and then adapt the model to differences in synthesis and characterization that are otherwise difficult to parameterize. We then apply this strategy to discovering thermoelectric materials where we prioritize synthesis at temperatures < 300{\deg}C. We document a previously unreported chemical family of thermoelectric materials, PbSe:SnSb, finding that the best candidate in this chemical family, 2 wt% SnSb doped PbSe, exhibits a power factor more than 2x that of PbSe. Our investigations show that our closed-loop experimentation strategy reduces the required number of experiments to find an optimized material by as much as 3x compared to high-throughput searches powered by state-of-the-art machine learning models. We also observe that this improvement is dependent on the accuracy of prior in a manner that exhibits diminishing returns, and after a certain accuracy is reached, it is factors associated with experimental pathways that dictate the trends.

Machine-learned interatomic potentials trained across the periodic table have made atomistic simulation broadly accessible, and specializing them to a single compound class is widely expected to improve accuracy. Yet examples remain scarce, and fewer still surpass universal models in speed or reach a higher level of electronic-structure theory. Here we present a potential that is universal within the class of water-free solid-state hydrogen-bond network mediated proton conductors rather than across chemistry and a database of 4.4 million first-principles configurations spanning 55 materials. It surpasses leading general-purpose potentials across this domain, recovering measured activation energies and the ordering of anion rotational dynamics that those models miss; agreement on static structure does not imply agreement on transport. Accuracy falls for compositions far from the training set but stays competitive for close structural relatives, and a higher level of electronic-structure theory is reached with a few hundred additional configurations per material. We further introduce a compact variant carrying a fifth of the parameters, faster still and yet more accurate than every general-purpose model tested. It sustains more than a quarter of a million atoms on a single graphics processor, placing grain boundaries and the transition into the highly conducting phase within reach, and making a quantum treatment of the protons affordable. Reference accuracy and accessible system size thus become largely independent, offering a template for other compound classes.

The rapid discovery of materials is constrained by the lack of large, machine-readable datasets that couple performance metrics with structural context. Existing databases are either small, manually curated, or biased toward first principles results, leaving experimental literature underexploited. We present an agentic, large language model (LLM)-driven workflow that autonomously extracts thermoelectric and structural-properties from about 10,000 full-text scientific articles. The pipeline integrates dynamic token allocation, zeroshot multi-agent extraction, and conditional table parsing to balance accuracy against computational cost. Benchmarking on 50 curated papers shows that GPT-4.1 achieves the highest accuracy (F1 = 0.91 for thermoelectric properties and 0.82 for structural fields), while GPT-4.1 Mini delivers nearly comparable performance (F1 = 0.89 and 0.81) at a fraction of the cost, enabling practical large scale deployment. Applying this workflow, we curated 27,822 temperature resolved property records with normalized units, spanning figure of merit (ZT), Seebeck coefficient, conductivity, resistivity, power factor, and thermal conductivity, together with structural attributes such as crystal class, space group, and doping strategy. Dataset analysis reproduces known thermoelectric trends, such as the superior performance of alloys over oxides and the advantage of p-type doping, while also surfacing broader structure-property correlations. To facilitate community access, we release an interactive web explorer with semantic filters, numeric queries, and CSV export. This study delivers the largest LLM-curated thermoelectric dataset to date, provides a reproducible and cost-profiled extraction pipeline, and establishes a foundation for scalable, data-driven materials discovery beyond thermoelectrics.

Accurate and fast prediction of materials properties is central to the digital transformation of materials design. However, the vast design space and diverse operating conditions pose significant challenges for accurately modeling arbitrary material candidates and forecasting their properties. We present MatterSim, a deep learning model actively learned from large-scale first-principles computations, for efficient atomistic simulations at first-principles level and accurate prediction of broad material properties across the periodic table, spanning temperatures from 0 to 5000 K and pressures up to 1000 GPa. Out-of-the-box, the model serves as a machine learning force field, and shows remarkable capabilities not only in predicting ground-state material structures and energetics, but also in simulating their behavior under realistic temperatures and pressures, signifying an up to ten-fold enhancement in precision compared to the prior best-in-class. This enables MatterSim to compute materials' lattice dynamics, mechanical and thermodynamic properties, and beyond, to an accuracy comparable with first-principles methods. Specifically, MatterSim predicts Gibbs free energies for a wide range of inorganic solids with near-first-principles accuracy and achieves a 15 meV/atom resolution for temperatures up to 1000K compared with experiments. This opens an opportunity to predict experimental phase diagrams of materials at minimal computational cost. Moreover, MatterSim also serves as a platform for continuous learning and customization by integrating domain-specific data. The model can be fine-tuned for atomistic simulations at a desired level of theory or for direct structure-to-property predictions, achieving high data efficiency with a reduction in data requirements by up to 97%.

Crystal structure determination from powder diffraction patterns is a complex challenge in materials science, often requiring extensive expertise and computational resources. This study introduces DiffractGPT, a generative pre-trained transformer model designed to predict atomic structures directly from X-ray diffraction (XRD) patterns. By capturing the intricate relationships between diffraction patterns and crystal structures, DiffractGPT enables fast and accurate inverse design. Trained on thousands of atomic structures and their simulated XRD patterns from the JARVIS-DFT dataset, we evaluate the model across three scenarios: (1) without chemical information, (2) with a list of elements, and (3) with an explicit chemical formula. The results demonstrate that incorporating chemical information significantly enhances prediction accuracy. Additionally, the training process is straightforward and fast, bridging gaps between computational, data science, and experimental communities. This work represents a significant advancement in automating crystal structure determination, offering a robust tool for data-driven materials discovery and design.

Inverse design of inorganic crystals, in which structures are generated to satisfy a target property while preserving diversity and physical plausibility, remains more demanding than ab initio generation, as property conditioning can degrade the structural quality that current generative models otherwise achieve. We propose a diffusion framework that jointly denoises crystal-structure variables and site-resolved local electronic descriptors through a shared score network. As representative descriptors, we adopt Bader charge and atomic density of states (atomic DOS). Under both band-gap and formation energy conditioned generation, the joint models achieved higher success rates than the structure-only baseline in most target conditions, while simultaneously increasing the fraction of generated structures that satisfy uniqueness, novelty, thermodynamic stability, and physical validity (VSUN criteria). A dummy-variable control confirms that these gains originate from the electronic content of the descriptors rather than from auxiliary site-wise variables. The generated Bader charges agree with DFT references with an MAE of 5.5e-2 e on stable structures, and the generated atomic DOS captures the coarse spectral profile of the DFT reference around the modal accuracy range, although finer details and accuracy vary with elemental species. These results establish local electronic descriptors as effective generative variables that serve two complementary roles: broadening the explored materials space through increased structural diversity, and mitigating the trade-off between property targeting and structural quality by guiding the structural trajectory toward electronically plausible configurations during joint denoising.

Hydrogen-rich materials under pressure are candidates for conventional phonon-mediated superconductivity, but first-principles electron--phonon-coupling (EPC) calculations are computationally demanding. We develop an interpretable multistage workflow for prioritizing binary hydride superconductors before full EPC calculations. Using controlled cubic X_mH_n prototypes at 200~GPa, we introduce the spectral moment A_1 as an intermediate measure of electron--phonon perturbation strength. In its linewidth-based construction, A_1 remains finite as harmonic phonons soften, allowing related structures with imaginary harmonic modes to be screened; it does not establish superconductivity or physical realizability for unstable structures. For dynamically stable cubic systems, A_1 correlates strongly with the H-1s density-of-states fraction at the Fermi level, α, a projected Fermi-surface descriptor, β, and atomic number density, ρ. These trends are summarized heuristically by A_1approx hαβρ, where h is framework- and pressure-dependent; the descriptor is used for ranking, not as a universal T_c predictor. We incorporate αβρ and enthalpic competitiveness into a three-stage evolutionary search comprising multiobjective structural screening, harmonic-phonon stability filtering, and coarse density-functional perturbation-theory (DFPT) EPC calculations. Application to more than 100,000 binary hydride structures at 50 and 200~GPa identifies candidates and prioritizes NaH_6 structural families. Higher-accuracy calculations show that Pm3m NaH_6 is dynamically stable down to 50~GPa and has a harmonic Allen--Dynes estimate of T_capprox230~K. The framework combines electronic descriptors with progressively more expensive stability and EPC calculations for scalable hydride exploration.

Exciton-polaritons are unique quasiparticles with hybrid properties of an exciton and a photon, opening ways to realize ultrafast strongly nonlinear systems and inversion-free lasers based on Bose-Einstein polariton condensation. However, the real-world applications of the polariton systems are still limited due to the temperature operation and costly fabrication techniques for both exciton materials and photon cavities. 2D perovskites represent one of the most prospective platforms for the realization of strong light-matter coupling since they possess room-temperature exciton states with large oscillator strength and can simultaneously provide planar photon cavities with high field localization due to the huge refractive index of the material. In this work, we demonstrate for the first time the mechanical scanning probe lithography method for the realization of low-cost room-temperature exciton-polariton systems based on the 2D perovskite (PEA)_2PbI_4 with exciton binding energy exceeding 200 meV. Precisely controlling the lithography parameters, we broadly adjust the exciton-polariton dispersion and radiative losses of polaritonic modes in the range of 0.1 to 0.2 of total optical losses. Our findings represent a versatile approach to the fabrication of planar high-quality perovskite-based photonic cavities supporting the strong light-matter coupling regime for the development of on-chip all-optical active and nonlinear polaritonic devices.

Planar metasurfaces can profoundly control electromagnetic scattering. At microwave frequencies, such devices are typically implemented using multilayer cascades of patterned metallic sheets, whose design often requires time-consuming full-wave optimization. Here, we extend analytical models originally developed for sparse loaded-wire metagratings to accurately describe densely packed Jerusalem-cross meta-atoms embedded in standard printed circuit board (PCB) dielectric stacks. The model captures both near- and far-field coupling within and between layers, enabling efficient prediction of the dual-polarized response. Using this framework, we identify highly transmissive meta-atoms whose phase is controlled by the leg lengths of the Jerusalem crosses (microscopic design stage). This (phase)-(leg-length) "lookup table" allows rapid synthesis of Huygens' metasurfaces (macroscopic design stage), demonstrated through a full-wave-validated metalens exhibiting low-reflection beam manipulation. Notably, we implement a judicious scaling method to further extend the model to predict wideband meta-atom responses. In the companion paper (Part II), a hybrid machine-learning approach leverages this semianalytical framework to enhance accuracy without requiring the conventional exhaustive full-wave training, enabling ultrafast inverse design across the full parameter space. Overall, the presented methodology -- the standalone semianlytical scheme (Part I) and the machine-learning enhanced version (Part II) -- establishes an effective open-source toolkit for versatile, rapid, and highly accurate synthesis of fabrication-ready dual-polarized transmissive Huygens' meta-atoms and metasurfaces.

Color centers in diamond, among them the negatively-charged germanium vacancy (GeV^-), are promising candidates for many applications of quantum optics such as a quantum network. For efficient implementation, the optical transitions need to be coupled to a single optical mode. Here, we demonstrate the transfer of a nanodiamond containing a single ingrown GeV- center with excellent optical properties to an open Fabry-P\'erot microcavity by nanomanipulation utilizing an atomic force microscope. Coupling of the GeV- defect to the cavity mode is achieved, while the optical resonator maintains a high finesse of F = 7,700 and a 48-fold spectral density enhancement is observed. This article demonstrates the integration of a GeV- defect with a Fabry-P\'erot microcavity under ambient conditions with the potential to extend the experiments to cryogenic temperatures towards an efficient spin-photon platform.

Moiré semiconductors provide a physical realization of the Hubbard model. Bandwidth-tuned Mott transitions and complex phase diagrams mimicking those of high-temperature superconductors have been demonstrated near a weak Mott insulating state at half-band-filling. The platform also provides an opportunity to explore the physics of a partially filled Hubbard band at doping densities far away from the Mott insulator, a regime that has remained largely unexplored. Here we report the emergence of an extended strange metal (ESM), in both doping density and twist angle, in a partially filled Hubbard band of twisted bilayer WSe2. The ESM is in the clean limit, persists down to 100mK, and spans over multiple symmetry-breaking ground states; it also appears only at small twist angles, where electronic correlations are strong. These observations distinguish the state from the reported strange metals associated with quantum criticality and favor the viewpoint that it is an intrinsic state of matter. We also report the observation of a new superconducting dome being developed from the ESM but far away from both the Mott insulating state and the van Hove singularity of the material. Our work opens the door to exploring the new regime of partially filled Hubbard bands in the clean limit.

Molecular ferroelectric materials have attracted widespread attention due to their abundant chemical diversity, structural tunability, low synthesis temperature, and high flexibility. Meanwhile, the integration of molecular ferroelectric materials and Si is still challenging, while the fundamental understanding of the ferroelectric switching process is still lacking. Herein, we have successfully synthesized the imidazole perchlorate (ImClO4) single crystals and a series of high-quality highly-oriented thin films on a Si substrate. A high inverse piezoelectric coefficient (55.7 pm/V) is demonstrated for the thin films. Two types of domain bands can be observed (in the size of a few microns): type-I band tilts ~60{\deg} with respect to the horizontal axis, while the type-II band is perpendicular to the horizontal axis. Most of the domain walls (DWs) are 180{\deg} DWs for the two bands, while some 109{\deg} DWs can also be observed. Interestingly, the DWs in type-I band are curved, charged domain walls; while the 180{\deg} DWs in type-II band are straight, noncharged domain walls. After applying +20 V for 5 s through a PFM tip, the 180{\deg} DWs in type-I band shrink first, then disconnect from the band boundary, forming a needle-like domain with a size of ~100 nm. The needle-like domain will extend toward the band boundary after an inverse bias is applied (-20 V), and expand along the band boundary after touching the boundary. Whereas for the type-II domain band, the 180{\deg} DWs are more mobile than the 109{\deg} domain walls, which displaces ~500 nm after applying +20 V. While such displacement is much shorter after the application of a negative bias for the same duration, starting from the positively poled sample. We hope to spur further interest in the on-chip design of the molecular ferroelectrics based electronic devices.

Facing with grave climate change and enormous energy demand, catalyzer gets more and more important due to its significant effect on reducing fossil fuels consumption. Hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) by water splitting are feasible ways to produce clean sustainable energy. Here we systematically explored atomic structures and related STM images of Se defects in PtSe2. The equilibrium fractions of vacancies under variable conditions were detailly predicted. Besides, we found the vacancies are highly kinetic stable, without recovering or aggregation. The Se vacancies in PtSe2 can dramatically enhance the HER performance, comparing with, even better than Pt(111). Beyond, we firstly revealed that PtSe2 monolayer with Se vacancies is also a good OER catalyst. The excellent bipolar catalysis of Se vacancies were further confirmed by experimental measurements. We produced defective PtSe2 by direct selenization of Pt foil at 773 K using a CVD process. Then we observed the HER and OER performance of defective PtSe2 is much highly efficient than Pt foils by a series of measurements. Our work with compelling theoretical and experimental studies indicates PtSe2 with Se defects is an ideal bipolar candidate for HER and OER.

We successfully synthesized a novel intermetallic compound rm CrFe_2Ge_2 with the rm Fe_{13}Ge_{8}-type crystal structure. A structural study is presented combining single-crystal X-ray diffraction and Mössbauer spectroscopy analysis, confirming the presence of two distinct Fe sublattices. rm CrFe_2Ge_2 exhibits a metallic ferromagnetic state with T_C approx rm 200~K. This material does not follow the usual M^2 propto H/M Arrott law, rather a modified Arrott law is obeyed in this material. The critical exponents determined from detailed analysis of modified Arrott plots were found to be β= 0.392, γ= 1.309 and δ= 4.26 obtained from the critical isotherm at T_{rm C} =rm 200~K. Self-consistency and reliability of the critical exponent analysis were verified by the Widom scaling law and scaling equations. Using the results from renormalization group calculation, the critical behavior of rm CrFe_2Ge_2 is akin to that of a d=3, n=3 ferromagnet in which the magnetic exhange distance is found to decay as J(r) approx r^{-4.86} with long-range magnetic coupling. The evaluated Rhodes-Wohlfarth ratio of sim 3 points to an itinerant ferromagnetic ground state. Low-temperature measurements of resistivity, p(T), and specific heat, C_P(T), reveal a pronounced contribution from electron-magnon scattering.

Carbon nanotubes (CNTs) are critical building blocks in nanotechnology, yet the characterization of their dynamic growth is limited by the experimental challenges in nanoscale motion measurement using scanning electron microscopy (SEM) imaging. Existing ex situ methods offer only static analysis, while in situ techniques often require manual initialization and lack continuous per-particle trajectory decomposition. We present Visual Feature Tracking (VFTrack) an in-situ real-time particle tracking framework that automatically detects and tracks individual CNT particles in SEM image sequences. VFTrack integrates handcrafted or deep feature detectors and matchers within a particle tracking framework to enable kinematic analysis of CNT micropillar growth. A systematic using 13,540 manually annotated trajectories identifies the ALIKED detector with LightGlue matcher as an optimal combination (F1-score of 0.78, alpha-score of 0.89). VFTrack motion vectors decomposed into axial growth, lateral drift, and oscillations, facilitate the calculation of heterogeneous regional growth rates and the reconstruction of evolving CNT pillar morphologies. This work enables advancement in automated nano-material characterization, bridging the gap between physics-based models and experimental observation to enable real-time optimization of CNT synthesis.